irlr8103v International Rectifier Corp., irlr8103v Datasheet

no-image

irlr8103v

Manufacturer Part Number
irlr8103v
Description
30v Single N-channel Hexfet Power Mosfet In A D-pak Package
Manufacturer
International Rectifier Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR8103V
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
irlr8103vPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
irlr8103vTR
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
irlr8103vTR
Manufacturer:
IR
Quantity:
1 853
Part Number:
irlr8103vTRLPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Company:
Part Number:
irlr8103vTRRPBF
Quantity:
1 291
www.irf.com
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
R
The IRLR8103V offers an extremely low combination of
Q
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source Current
(V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Maximum Junction-to-Ambient
Maximum Junction-to-Case
DS(on)
sw
applications
100% R
GS
& R
> 10V)
, gate charge and Cdv/dt-induced turn-on immunity.
DS(on)
G
Tested
for reduced losses in both control and
ÃÃÃÃÃÃÃÃÃÃÃÃÃ
Parameter
Parameter
h
h
TC = 25°C
TC = 25°C
TC = 90°C
TC= 90°C
T
Symbol
Symbol
J
R
R
V
V
I
, T
P
I
DM
I
I
SM
θJA
θJC
GS
D
DS
S
D
STG
DEVICE CHARACTERISTICS…
D-Pak
R
Q
Q
DS(on)
Q
OSS
SW
G
Typ.
–––
–––
IRLR8103V
-55 to 150
±20
363
115
363
IRLR8103V
30
91
63
60
91
IRLR8103V
G
7.9 mΩ
27 nC
12 nC
29nC
Max.
1.09
50
PD-94021C
10/22/04
Units
Units
°C/W
°C
W
D
S
V
A
A
1

Related parts for irlr8103v

Related keywords