irlr8103v International Rectifier Corp., irlr8103v Datasheet - Page 2

• Manufacturer Part Number: irlr8103v
• Description: 30v Single N-channel Hexfet Power Mosfet In A D-pak Package
• Manufacturer: International Rectifier Corp.

IRLR8103V
2
Electrical Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-Source Leakage Current
Total Gate Charge, Control FET
Total Gate Charge, Synch FET
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate to Drain Charge
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Rating & Characteristics
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Charge
(with Parallel Schottky)

‚
ƒ
„
…
†
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
Typical values of R
θ
Parameter
Parameter
gs2
+ Q
gd
)
DS
oss
(on) measured at V
Symbol Min Typ Max Units
BV
R
V
I
I
Q
Q
Q
Q
Q
Q
Q
R
t
t
t
t
C
C
C
V
Q
Q
Symbol Min Typ Max Units
DSS
GSS
d(on)
r
d(off)
f
GS(th)
SD
DS(on)
G
iss
oss
rss
G
G
GS1
GS2
GD
SW
OSS
rr
rr(s)
DSS
GS
= 4.5V, Q
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2672 –––
––– 1064 –––
–––
–––
–––
–––
1.0
0.8
30
G
, Q
–––
–––
–––
–––
–––
––– ±100
–––
109
103
6.9
7.9
4.7
2.0
9.7
0.9
SW
27
23
12
29
10
24
18
96
9
and Q
10.5
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.0
3.0
3.1
1.3
50
20
OSS
measured at V
mΩ
nC
nC
nC
µA
µA
nA
pF
ns
Ω
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
Clamped Inductive Load
V
IS = 15A
di/dt ~ 700A/µs
V
di/dt = 700A/µs , (with 10BQ040)
V
V
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
DD
GS
GS
DS
DS
GS
= 15A
GS
= 16V, V
= V
= 30V, V
= 24V, V
= 24V, V
= 16V, I
= 16V, V
= 16V, V
= 0V, I
= 10V, I
= 4.5V, I
= ± 20V
= 5V, I
= 16V
= 5.0V
= 16V, V
= 5V, V
= 5.0V, I
GS
d
, I
, V
D
D
Conditions
Conditions
D
D
F
D
DS
GS
= 250µA
= 15A, V
D
GS
GS
GS
GS
GS
GS
= 15A.
= 250µA
GS
= 15A
= 15A
= 15A
< 100mV
=0
= 0V, I
= 0V
= 0
= 0, T
= 0
= 0V, I
= 0V
www.irf.com
d
d
DS
J
F
F
= 100°C
= 15A
= 15A
= 16V