si4430bdy Vishay, si4430bdy Datasheet

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si4430bdy

Manufacturer Part Number
si4430bdy
Description
N-channel 30-v Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
si4430bdy-T1-E3
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VISHAY
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si4430bdy-T1-E3
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VISHAY
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si4430bdy-T1-E3
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si4430bdy-T1-E3
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Part Number:
si4430bdy-T1-E3
Quantity:
500
Company:
Part Number:
si4430bdy-T1-E3
Quantity:
70 000
Part Number:
si4430bdy-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
33 919
Part Number:
si4430bdy-T1-GE3
Manufacturer:
LT
Quantity:
482
Part Number:
si4430bdy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
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Part Number:
si4430bdy-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 73184
S-70316-Rev. B, 12-Feb-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free)
G
S
S
S
0.0045 at V
0.006 at V
1
2
3
4
r
DS(on)
GS
Top View
GS
SO-8
(Ω)
= 4.5 V
= 10 V
J
a
= 150 °C)
8
7
6
5
a
I
a
N-Channel 30-V MOSFET
D
D
D
D
D
20
17
(A)
a
A
Q
New Product
= 25 °C, unless otherwise noted
g
Steady State
Steady State
L = 0.1 mH
24
T
T
T
T
(Typ)
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
• 100 % R
Symbol
Symbol
G
T
R
R
J
V
V
I
I
P
, T
DM
I
I
AS
thJA
thJF
GS
N-Channel MOSFET
DS
D
S
D
stg
g
D
S
Tested
®
Power MOSFETS
Typical
10 sec
2.7
3.0
2.0
20
16
34
67
15
- 55 to 150
± 20
± 60
30
40
Steady State
Maximum
1.40
1.6
1.0
14
11
41
80
19
Vishay Siliconix
Si4430BDY
www.vishay.com
°C/W
Unit
Unit
RoHS
°C
COMPLIANT
W
V
A
1

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si4430bdy Summary of contents

Page 1

... SO Top View Ordering Information: Si4430BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4430BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73184 S-70316-Rev. B, 12-Feb- °C J 0.8 1.0 1.2 Si4430BDY Vishay Siliconix 4000 3500 C iss 3000 2500 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4430BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 * Limited by r DS(on °C C 0.1 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS > ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73184. Document Number: 73184 S-70316-Rev. B, 12-Feb- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4430BDY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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