si4430bdy Vishay, si4430bdy Datasheet - Page 3

• Manufacturer Part Number: si4430bdy
• Description: N-channel 30-v Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73184
S-70316-Rev. B, 12-Feb-07
0.010
0.008
0.006
0.004
0.002
0.000
60
10
6
5
4
3
2
1
0
1
0.00
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
5
10
= 20 A
On-Resistance vs. Drain Current
0.2
V
= 15 V
V
SD
Q
T
GS
J
g
= 150 °C
10
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
= 4.5 V
I
20
D
0.4
- Drain Current (A)
Gate Charge
15
30
0.6
V
20
GS
= 10 V
40
0.8
25
T
J
= 25 °C
50
1.0
30
1.2
60
35
0.025
0.020
0.015
0.010
0.005
0.000
4000
3500
3000
2500
2000
1500
1000
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
rss
GS
= 20 A
5
V
= 10 V
V
2
DS
T
GS
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
C
25
oss
Capacitance
4
50
15
Vishay Siliconix
C
Si4430BDY
iss
6
75
20
I
D
= 20 A
www.vishay.com
100
8
25
125
150
30
10
3