2sk974s Renesas Electronics Corporation., 2sk974s Datasheet
2sk974s
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2sk974s Summary of contents
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L Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • gate drive device – Can be driven from 5 V source • ...
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L , 2SK974 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol ——————————————————————————————————————————— Drain to source breakdown V (BR)DSS voltage ——————————————————————————————————————————— Gate to source breakdown V (BR)GSS voltage ——————————————————————————————————————————— Gate to source leak current I GSS ——————————————————————————————————————————— Zero ...
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Power vs. Temperature Derating 100 150 Case Temperature T (°C) C Typical Output Characteristics Pulse Test 3 2 ...
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L , 2SK974 S Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Pulse Test 0.8 0.6 0 Gate to Source Voltage V Static Drain to Source on State ...
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Body to Drain Diode Reverse Recovery Time 500 di/ 25° 200 Pulse Test 100 0.2 0.5 1 Reverse Drain Current I (A) DR ...
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L , 2SK974 S Reverse Drain Current vs. Source to Drain Voltage 10 Pulse Test – 0.4 0.8 1.2 1.6 Source to Drain ...
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Switching Time Test Circuit Vin Monitor Vout Monitor D.U Vin = 2SK974 L , 2SK974 S Wavewforms 90 % Vin Vout ...