2sk4079a Renesas Electronics Corporation., 2sk4079a Datasheet

2sk4079a

Manufacturer Part Number

2sk4079a

Description

N-channel Mosfet For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.2SK4079A.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2sk4079a(1)-T1B-AT/JM

Manufacturer:

DIODES

Quantity:

2 328

Company:

Meier Automation Equipment Co., Limited

Part Number:

2sk4079a(1)-T1B-AT/JM

Manufacturer:

NEC

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2sk4079a1)-T1B-AT/JM

Manufacturer:

RENESA

Quantity:

666

Current page: 1 of 6
Download datasheet (150Kb)

Document No. D18257EJ1V0DS00 (1st edition)

Date Published December 2006 NS CP (K)

Printed in Japan

general-purpose switch, is a device which can be driven directly

by a 4.5 V power source.

• Directly driven by a 4.5 V power source.

• Low on-state resistance

ORDERING INFORMATION

Remark "-AT" indicates Pb-free.

Remark for Agent ORDER NUMBER "2SK4079A(1)" must be used to order, instead of "QN7002".

Marking: G28

ABSOLUTE MAXIMUM RATINGS (T

Note PW ≤ 10

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

DESCRIPTION

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

The QN7002, N-channel vertical type MOSFET designed for

DS(on)1

DS(on)2

QN7002-T1B-AT

QN7002-T2B-AT

PART NUMBER

This product dose not contain Pb external electrode and other parts.

8 mm embossed carrier tape, 3,000 pcs/reel.

caution for electrostatic discharge.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

= 2.7 Ω MAX. (V

= 3.2 Ω MAX. (V

ESD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.

s, Duty Cycle ≤ 1%

For instance, "2SK4079A(1)-T1B-AT".

Note

= 0 V)

= 10 V, I

= 4.5 V, I

= 0 V)

SC-59 (Mini Mold)

PACKAGE

= 100 mA)

= 50 mA)

N-CHANNEL MOSFET

= 25°C)

FOR SWITCHING

D(DC)

D(pulse)

stg

DSS

GSS

DATA SHEET

−55 to +150

MOS FIELD EFFECT TRANSISTOR

±800

±20

200

150

°C

PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

Gate

Protection

Diode

QN7002

Source

Drain

1. Source

2. Gate

3. Drain

Body

Diode

2006

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