2sk1109 Renesas Electronics Corporation., 2sk1109 Datasheet
2sk1109
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2sk1109 Summary of contents
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... N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1109 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance 1000 S TYP 100 A) DSS 1600 S TYP 200 A) DSS Includes diode and high resistance ORDERING INFORMATION PART NUMBER ...
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... 1.0 kHz fs2 5 1.0 MHz iss See Test Circuit J34 J35 J36 90 to 180 150 to 300 200 to 450 NV (r.m.s) Data Sheet D15940EJ1V0DS 2SK1109 MIN. TYP. MAX. UNIT 40 600 A 0.1 1.0 V 350 S 350 S 7.0 8.0 pF 1.8 3.0 V J37 300 to 600 ...
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... GATE TO SOURCE VOLTAGE 1.0 0.8 0.6 120 140 160 V GS INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 +0 500 1000 Data Sheet D15940EJ1V0DS 2SK1109 0.4 0.2 0 0.2 0.4 0.6 0.8 1 Gate to Source Voltage - 1.0 MHz 100 - Drain to Source Voltage - V ...
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... V - Drain to Source Voltage - V DS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J37 900 720 540 360 180 Drain to Source Voltage - V DS Data Sheet D15940EJ1V0DS 2SK1109 0.15 V 0. 0.15 V 0. 0.15 V 0. 0.05 V 0. ...
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... Data Sheet D15940EJ1V0DS 2SK1109 5 ...
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... Data Sheet D15940EJ1V0DS 2SK1109 ...
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... Data Sheet D15940EJ1V0DS 2SK1109 7 ...
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... NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 2SK1109 Not all The M8E 00. 4 ...