2sk1318 Renesas Electronics Corporation., 2sk1318 Datasheet
2sk1318
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2sk1318 Summary of contents
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... Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) Rev ...
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... Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle ° 2. Value Electrical Characteristics Item Drain to source breakdown voltage ...
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... Main Characteristics Power vs. Temperature Derating Case Temperature T Typical Output Characteristics Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage V Rev.2.00 Sep 07, 2005 page ...
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... Static Drain to Source on State Resistance vs. Temperature 0.25 Pulse Test 0 0.05 0 – Case Temperature T Body to Drain Diode Reverse Recovery Time 500 200 100 50 20 di/ Pulse Test 5 0.2 0 Reverse Drain Current I Dynamic Input Characteristics 200 V = 100 V DD ...
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... 1.0 0.5 0.3 0.2 0.1 0.1 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor 50 Vin 10 V Rev.2.00 Sep 07, 2005 page Reverse Drain Current vs. Source to Drain Voltage 20 Pulse Test – 0.5 1 1.5 Source to Drain Voltage V Normalized Transient Thermal Impedance vs. Pulse Width ...
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... SC-67 PRSS0003AD-A 1.2 ± 0.2 1.4 ± 0.2 2.54 ± 0.5 Ordering Information Part Name 2SK1318-E 500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page Package Name MASS[Typ.] TO-220FM / TO-220FMV 1.8g 10.0 ± ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...