2sk1316 Renesas Electronics Corporation., 2sk1316 Datasheet
2sk1316
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2sk1316 Summary of contents
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... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK Gate 2. Drain 3. Source S 4. Drain ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1315 2SK1316 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value ...
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... Turn-off delay time t d(off) Fall time t f Body to drain diode forward V DF voltage Body to drain diode reverse t rr recovery time Note: 1. Pulse test See characteristic curves of 2SK1159, 2SK1160. 2SK1315(L)(S), 2SK1316(L)(S) Typ Max Unit 450 — — V 500 30 — — V — — — ...
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... Power vs. Temperature Derating 100 Case Temperature T (°C) C 150 ...
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Hitachi Code LDPAK (L) JEDEC — EIAJ — Weight (reference value) 1.4 g Unit: mm ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...