2sk2311

Manufacturer Part Number2sk2311
DescriptionN Channel Mos Type High Speed, High Current Switching Applications Chopper Regulator, Dc-dc Converter And Switching Regulator Applications
ManufacturerTOSHIBA Semiconductor CORPORATION
2sk2311 datasheet
 
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
Chopper Regulator, DC−DC Converter and Switching
Regulator Applications
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current : I
= 100 μA (max) (V
DSS
Enhancement mode
: V
= 0.8~2.0 V (V
th
Absolute Maximum Ratings
Characteristics
Drain−source voltage
Drain−gate voltage (R
= 20 kΩ)
GS
Gate−source voltage
DC (Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
= 25 V, T
= 25°C (initial), L = 339 μH, R
DD
ch
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
2SK2311
: R
= 36 mΩ (typ.)
DS (ON)
: |Y
| = 16 S (typ.)
fs
= 60 V)
DS
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
60
V
DSS
V
60
V
DGR
V
±20
V
GSS
I
25
A
D
I
100
A
DP
P
40
W
D
E
156
mJ
AS
I
25
A
AR
E
3.5
mJ
AR
T
150
°C
ch
T
−55~150
°C
stg
Symbol
Max
Unit
R
3.125
°C / W
th (ch−c)
R
83.3
°C / W
th (ch−a)
= 25 Ω, I
= 25 A
G
AR
1
2SK2311
2
−π−MOSV)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
2006-11-17

2sk2311 Summary of contents

  • Page 1

    ... T −55~150 °C stg Symbol Max Unit R 3.125 ° (ch−c) R 83.3 ° (ch− Ω 2SK2311 2 −π−MOSV) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2006-11-17 ...

  • Page 2

    ... Test Condition I — — DRP DSF μ 2SK2311 Min Typ. Max — — ±10 — — 100 60 — 0.8 — 2.0 — 57 — — 1000 — 200 — 550 — ...

  • Page 3

    ... 3 2SK2311 2006-11-17 ...

  • Page 4

    ... 4 2SK2311 2006-11-17 ...

  • Page 5

    ... Ω 339 μ 2SK2311 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V VDSS DD ⎝ ⎠ 2006-11-17 ...

  • Page 6

    ... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2311 20070701-EN 2006-11-17 ...