2sk2508 TOSHIBA Semiconductor CORPORATION, 2sk2508 Datasheet

no-image

2sk2508

Manufacturer Part Number
2sk2508
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2508
Manufacturer:
TOS
Quantity:
25 000
Part Number:
2SK2508
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2SK2508
Quantity:
50
Part Number:
2sk2508(F
Manufacturer:
NEC
Quantity:
2 718
Part Number:
2sk2508(F
Manufacturer:
TOSHIBA
Quantity:
1 383
Part Number:
2sk2508(F,T)
Manufacturer:
MURATA
Quantity:
20 562
Switching Regulator and DC−DC Converter and Motor
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
= 50 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
= 25°C (initial), L = 1.48 mH, R
(Note 1)
(Note 2)
: I
: V
DSS
th
= 1.5~3.5 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
V
V
V
E
E
T
I
I
T
DGR
P
: R
: |Y
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
2SK2508
DS (ON)
fs
| = 13 S (typ.)
DS
= 0.18 Ω (typ.)
= 10 V, I
−55~150
Rating
DS
Max
2.78
62.5
250
250
±20
148
150
4.5
13
52
45
13
1
G
= 250 V)
= 25 Ω, I
D
= 1 mA)
°C / W
°C / W
Unit
Unit
AR
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 13 A
Weight: 1.9 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10R1B
SC-67
2006-11-21
2SK2508
Unit: mm

Related parts for 2sk2508

2sk2508 Summary of contents

Page 1

... 148 4 150 ° −55~150 °C stg Symbol Max Unit R 2.78 ° (ch−c) R 62.5 ° (ch− Ω 2SK2508 JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ 2006-11-21 Unit: mm ...

Page 2

... I — — DRP DSF 100 A / μ 2SK2508 Min Typ. Max — — ±10 — — 100 250 — — 1.5 — 3.5 — 0.18 0. — — 1800 — — 130 — ...

Page 3

... 3 2SK2508 2006-11-21 ...

Page 4

... 4 2SK2508 2006-11-21 ...

Page 5

... Ω 1. 2SK2508 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V VDSS DD ⎝ ⎠ 2006-11-21 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2508 20070701-EN 2006-11-21 ...

Related keywords