2sk3403 TOSHIBA Semiconductor CORPORATION, 2sk3403 Datasheet

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2sk3403

Manufacturer Part Number
2sk3403
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3403
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
I
temperature
AR
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
= 13 A
= 90 V, T
GS
DC
Pulse
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 3.46 mH, R
= 3.0~5.0 V (V
(Note 1)
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
GSS
P
DSS
I
DP
AR
DS
| = 5.8 S (typ.)
AS
AR
stg
D
ch
R
R
D
2SK3403
Symbol
th (ch-a)
th (ch-c)
= 10 V, I
= 0.29 Ω (typ.)
DSS
= 450 V)
−55~150
D
Rating
450
450
±30
100
350
150
= 1 mA)
13
52
13
10
1
G
Max
1.25
83.3
= 25 Ω,
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
V
V
V
A
A
Unit
Weight: 1.5 g (typ.)
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-10S1B
2-10S2B
2006-11-06
2SK3403
Unit: mm

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2sk3403 Summary of contents

Page 1

... D E 350 150 °C ch −55~150 T °C stg Symbol Max Unit R 1.25 °C/W th (ch-c) R 83.3 °C/W th (ch- Ω 2SK3403 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2006-11-06 ...

Page 2

... Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/μ 2SK3403 Min Typ. Max ⎯ ⎯ ±10 ±30 ⎯ ⎯ ⎯ ⎯ 100 ⎯ ⎯ 450 ⎯ 3.0 5.0 ⎯ 0.29 0.4 ⎯ 3.0 5.8 ⎯ ⎯ ...

Page 3

... Drain-source voltage Gate-source voltage V 10 Common source Tc = 25°C Pulse test 1 0.1 100 0.1 3 2SK3403 I – Common source 8 25°C 8.25 Pulse test 8 7 – Common source Tc = 25°C ...

Page 4

... C iss −80 −40 1000 Dynamic input/output characteristics 500 400 300 200 100 0 200 0 4 2SK3403 I – −1 V −0.4 −0.6 −0.8 −1 −1.2 Drain-source voltage V ( – Common source ...

Page 5

... Pulse width t (S) w 400 300 200 100 Channel temperature (initial) Tch (° 1000 −15 V Test circuit = 25 Ω 3. 2SK3403 – 100 125 150 B VDSS Wave form ⎛ ⎞ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3403 20070701-EN 2006-11-06 ...

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