irfh5303pbf International Rectifier Corp., irfh5303pbf Datasheet - Page 3

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irfh5303pbf

Manufacturer Part Number
irfh5303pbf
Description
Hexfet? Power Mosfet Vds Rds On Max
Manufacturer
International Rectifier Corp.
Datasheet
www.irf.com
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
10000
1000
1000
1000
100
100
0.1
100
10
0.1
Fig 3. Typical Transfer Characteristics
10
1
1
Fig 1. Typical Output Characteristics
0.1
2.0
1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
3.0
T J = 25°C
1
2.8V
Ciss
Coss
4.0
Crss
V DS = 15V
≤ 60μs PULSE WIDTH
≤ 60μs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
5.0
10
TOP
BOTTOM
6.0
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
100
7.0
100
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance Vs. Temperature
2.0
1.5
1.0
0.5
1000
100
10
14
12
10
1
Fig 2. Typical Output Characteristics
-60 -40 -20
8
6
4
2
0
0.1
0
I D = 49A
V GS = 10V
I D = 49A
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
10
Q G Total Gate Charge (nC)
0
V DS = 24V
V DS = 15V
V DS = 6.0V
1
20
20
2.8V
40
≤ 60μs PULSE WIDTH
Tj = 150°C
30
60
80 100 120 140 160
10
40
TOP
BOTTOM
50
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
3
100
60

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