irfp2410 International Rectifier Corp., irfp2410 Datasheet - Page 2

• Manufacturer Part Number: irfp2410
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

IRFP2410
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
t
Q
t
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
L
L
SM
S
rr
on
DSS
d(on)
r
d(off)
f
GSS
V
fs
D
S
SD
(BR)DSS
DS(ON)
GS(th)
iss
oss
rss
rr
g
gs
gd
V
(BR)DSS
Repetitive rating; pulse width limited by
R
max. junction temperature. ( See fig. 11 )
DD
G
= 25 , I
= 25V, starting T
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Internal Source Inductance
Internal Drain Inductance
AS
= 37A. (See Figure 12)
J
= 25°C, L = 270µH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width
I
T
Min. Typ. Max. Units
Min. Typ. Max. Units
SD
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 4600 –––
––– 1100 --––
–––
–––
–––
2.0
–––
16
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
37A, di/dt
0.11
–––
––– 0.025
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
120
200
–––
180
990 1500
–––
–––
5.0
13
16
97
-100
–––
–––
–––
250
100
180
–––
–––
–––
–––
–––
–––
–––
270
240
4.0
2.5
300µs; duty cycle
25
30
69
61
200A/µs, V
V/°C
nA
nH
µA
ns
nC
nC
pF
ns
A
V
V
S
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 37A
= 37A
= 25°C, I
= 25°C, I
= 1.3
= 6.2
= 0V, I
= 10V, I
= V
= 25V, I
= 100V, V
= 80V, V
= 20V
= -20V
= 80V
= 10V, See Fig. 6 and 13
= 50V
= 0V
= 25V
V
2%.
(BR)DSS
GS
, I
D
See Fig. 10
S
F
D
D
D
Conditions
= 250µA
GS
= 37A
Conditions
= 37A, V
= 37A
= 250µA
= 37A
,
GS
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
= 0V
S
+L
D
)