irf7314q International Rectifier Corp., irf7314q Datasheet

irf7314q

Manufacturer Part Number

irf7314q

Description

Hexfet Power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF7314Q.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

irf7314qTRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 9
Download datasheet (149Kb)

Absolute Maximum Ratings

Typical Applications

Thermal Resistance

Benefits

Description

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the

lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other applications.

The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual

MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce

board space and is also available in Tape & Reel.

www.irf.com

Air bag

Anti-lock Braking Systems (ABS)

Electronic Fuel Injection

Advanced Process Technology

Dual P-Channel MOSFET

Ultra Low On-Resistance

Repetitive Avalanche Allowed up to Tjmax

Automotive [Q101] Qualified

@ T

175°C Operating Temperature

, T

STG

= 25°C

= 70°C

= 25°C

= 70°C

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Single Pulse Avalanche EnergyR

Avalanche CurrentQ

Repetitive Avalanche Energy

Junction and Storage Temperature Range

Gate-to-Source Voltage

Parameter

Maximum Junction-to-Ambient

Linear Derating Factor

Parameter

@ 10V

Max.

G 2

G 1

S 1

-20V

DSS

T o p V ie w

HEXFET

See Fig.14, 15, 16

0.058@V

0.098@V

-55 to + 175

DS(on)

± 12

D 1

D 2

Max.

D 2

-5.2

-4.3

610

-5.2

-20

-43

Units

2.4

1.7

62.5

IRF7314Q

Power MOSFET

max

= -4.5V

= -2.7V

SO-8

PD -93945A

-4.42A

-5.2A

mW/°C

Units

°C/W

°C

03/20/02

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