irf7314q International Rectifier Corp., irf7314q Datasheet
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irf7314q
Manufacturer Part Number
irf7314q
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
1.IRF7314Q.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
irf7314qTRPBF
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
Typical Applications
Thermal Resistance
Benefits
Description
Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual
MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
www.irf.com
V
I
I
I
P
P
V
E
I
E
T
R
D
D
DM
AR
DS
D
D
GS
AS
AR
J
Air bag
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Advanced Process Technology
Dual P-Channel MOSFET
Ultra Low On-Resistance
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
@ T
@ T
175°C Operating Temperature
, T
JA
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Gate-to-Source Voltage
Parameter
Maximum Junction-to-Ambient
Linear Derating Factor
Parameter
Q
GS
GS
S
S
@ 10V
@ 10V
S
Max.
G 2
G 1
S2
S 1
V
-20V
DSS
1
2
3
4
T o p V ie w
HEXFET
See Fig.14, 15, 16
0.058@V
0.098@V
8
7
6
5
-55 to + 175
R
DS(on)
± 12
D 1
D 1
D 2
Max.
D 2
-5.2
-4.3
610
-5.2
-20
-43
Units
2.4
1.7
16
62.5
IRF7314Q
®
GS
GS
Power MOSFET
max
= -4.5V
= -2.7V
SO-8
PD -93945A
-4.42A
-5.2A
mW/°C
Units
I
°C/W
D
mJ
mJ
°C
W
W
V
V
A
A
1
03/20/02