tc1550tg-g Supertex, Inc., tc1550tg-g Datasheet

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tc1550tg-g

Manufacturer Part Number
tc1550tg-g
Description
N- And P-channel Enhancement-mode Dual Mosfet
Manufacturer
Supertex, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC1550TG-G
Manufacturer:
MICROCHIP
Quantity:
1 000
Features
Applications
Ordering Information
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
500V breakdown voltage
Independent N- and P-channels
Electrically isolated N- and P-channels
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
High voltage pulsers
Amplifi ers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
TC1550
Device
Package Option
TC1550TG-G
8-Lead SOIC
*
Enhancement-Mode Dual MOSFET
-55°C to + 150°C
N-Channel
N- and P-Channel
500
(V)
300°C
Value
BV
BV
±20V
BV
DGS
DSS
DSS
/BV
DGS
General Description
The Supertex TC1550 consists of a high voltage N-channel
and P-channel MOSFET in an 8-Lead SOIC package. This
is an enhancement-mode (normally-off) transistor utilizing
an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coeffi cient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Pin Confi guration
Product Marking
P-Channel
-500
(V)
C1550
YYWW
L L L L
DN
DN
8-Lead SOIC (TG)
8-Lead SOIC (TG)
N-Channel
DP
YY = Year Sealed
WW = Week Sealed
L = Lot Number
DP
(top view)
(Ω)
60
SN
= “Green” Packaging
GN
R
SP
(Max)
DS(ON)
GP
P-Channel
TC1550
125
(Ω)

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tc1550tg-g Summary of contents

Page 1

... Piezoelectric transducer drivers ► General purpose line drivers Ordering Information Package Option Device 8-Lead SOIC TC1550 TC1550TG-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature ...

Page 2

N-Channel Electrical Characteristics Sym Parameter BV Drain-to-source breakdown voltage DSS V Gate threshold voltage GS(th) ΔV Change in V with temperature GS(th) GS(th) I Gate body leakage current GSS I Zero gate voltage drain current DSS I On-state drain current ...

Page 3

P-Channel Electrical Characteristics Sym Parameter BV Drain-to-source breakdown voltage DSS V Gate threshold voltage GS(th) ΔV Change in V with temperature GS(th) GS(th) I Gate body leakage current GSS I Zero gate voltage drain current DSS I On-state drain current ...

Page 4

... Logic Inputs INB GND V Supertex MD1210K6 Block Diagram 15V 0.47µ 10nF 250V OUTA 10nF 250V OUTB 15V SN 1 N-Channel P-Channel TC1550 +250V Piezoelectric Transducer -250V Supertex TC1550TG ...

Page 5

SOIC (Narrow Body) Package Outline (TG) 4.9x3.9mm body, 1.75mm height (max), 1.27mm pitch D 8 Note 1 (Index Area D/2 x E1/2) 1 Top View Side View Note 1: This chamfer feature is optional. If ...

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