s1226-18bu Hamamatsu Photonics, K.K.,, s1226-18bu Datasheet - Page 2

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s1226-18bu

Manufacturer Part Number
s1226-18bu
Description
Si Photodiode
Manufacturer
Hamamatsu Photonics, K.K.,
Datasheet
2
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Spectral response
Rise time vs. load resistance
Shunt resistance vs. ambient temperature
100 G
100 M
100 k
10 M
100 s
100 ns
10 G
10 k
1 M
10 s
10 ns
1 G
1 T
1 ms
1 s
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
190
10
20
2
AMBIENT TEMPERATURE (˚C)
400
0
LOAD RESISTANCE ( )
S1336-18BU
WAVELENGTH (nm)
10
S1336-18BU
3
20
600
S1226-18BU
S1226-18BU
S1226-18BU
S1336-18BU
(Typ. Ta 25 ˚C, V
40
800
10
(Typ. V
4
(Typ. Ta=25 ˚C)
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
60
R
1000
10 mV)
R
0 V)
10
80
Si photodiode
KSPDB0136EA
KSPDB0138EA
KSPDB0140EA
5
S1226-18BU, S1336-18BU
CONNECTED TO CASE
Photo sensitivity temperature characteristic
Dark current vs. reverse voltage
Dimensional outline (unit: mm)
100 pA
100 fA
10 nA
10 pA
1 nA
1 pA
+1.5
+1.0
+0.5
-0.5
WINDOW
0.01
0
190
3.0 ± 0.2
LEAD
0.45
400
REVERSE VOLTAGE
5.4 ± 0.2
4.7 ± 0.1
WAVELENGTH (nm)
0.1
2.54 ± 0.2
600
S1336-18BU
S1226-18BU
The UV glass may extend a maximum of 0.1 mm
above the upper surface of the cap.
S1336-18BU
a
S1226-18BU
S1226-18BU
2.4
800
1
(Typ. Ta 25 ˚C)
(V)
S1336-18BU
1000
(Typ. )
2.3
10
KSPDB0137EA
KSPDB0139EB
KSPDA0126EA
Cat. No. KSPD1037E02
Jul. 2004 DN

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