ftp02n65 ARK Microelectronics Co., Ltd., ftp02n65 Datasheet - Page 2

• Manufacturer Part Number: ftp02n65
• Description: 650v N-channel Mosfet
• Manufacturer: ARK Microelectronics Co., Ltd.

Electrical Characteristics
OFF Characteristics
BV
△BV
I
I
ON Characteristics
R
V
gfs
Dynamic Characteristics
ARK Microelectronics Co., Ltd.
Symbol
Symbol
Symbol
DSS
GSS
Resistive Switching Characteristics
t
DS(ON)
t
GS(TH)
d(OFF)
C
C
d(ON)
C
Q
Q
t
t
Q
rise
DSS
fall
Symbol
OSS
RSS
ISS
GD
GS
G
DSS
/△T
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
J
Drain-to-Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Parameter
Parameter
Parameter
Parameter
www.ark-micro.com
Min.
Min.
Min.
Min.
2/11
650
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
Typ.
Typ.
Typ.
266
0.6
1.3
8.0
0.6
2.6
5.2
21
10
22
19
30
--
--
4
--
--
--
--
Essentially independent of operating temperature
Essentially independent of operating temperature
Max.
Max.
Max.
Max.
-100
100
100
6.2
4.0
12
--
--
--
--
--
--
--
--
--
--
--
--
--
FTP02N65/FTA02N65
V/℃
Unit
Unit
Unit
Unit
µA
nA
nC
pF
ns
V
Ω
V
T
T
S
C
C
=25℃ unless otherwise specified
=25℃ unless otherwise specified
V
V
V
V
V
V
Reference to 25℃,
DS
DS
DS
GS
DS
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Rev. 2.0 Mar. 2009
GS
=520V, V
=10V, I
= V
=650V, V
=15V, I
=0V, I
V
V
V
I
T
V
f=1.0MH
V
V
Figure 14
Figure 15
V
D
R
I
I
GS
DD
DD
C
GS
D
D
=250µA
GS
DS
GS
GS
G
=125℃
=1.8A
=1.8A
=+30V
=20Ω
=-30V
=325V
=325V
=0V
=25V
=10V
, I
D
D
D
D
=250µA
=1.1A
=1.8A
=250µA
GS
GS
Z
=0V,
=0V
[4]
[4]