ftp02n65 ARK Microelectronics Co., Ltd., ftp02n65 Datasheet - Page 3

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ftp02n65

Manufacturer Part Number
ftp02n65
Description
650v N-channel Mosfet
Manufacturer
ARK Microelectronics Co., Ltd.
Datasheet
NOTE:
[1] T
[2] Repetitive rating, pulse width limited by maximum junction temperature.
[3] I
[4] Pulse width
ARK Microelectronics Co., Ltd.
Symbol
Source-Drain Diode Characteristics
V
I
I
Q
t
SM
SD
rr
SD
SD
rr
J
=+25℃ to +150℃
=1.8A, di/dt
Continuous Source Current (Body
Diode)
Maximum Pulsed Current(Body
Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
380µs; duty cycle
100A/µs, V
Parameter
DD
BV
2%.
DSS
, T
J
=+150℃
www.ark-micro.com
Min
3/11
--
--
--
--
--
Typ.
213
690
--
--
--
Max.
7.2
1.8
1.2
--
--
FTP02N65/FTA02N65
Units
nC
ns
A
A
V
T
C
=25℃ unless otherwise specified
I
F
Integral P-N diode in
=1.8A,di/dt=100A/µs
Rev. 2.0 Mar. 2009
I
Test Conditions
S
=1.8A, V
MOSFET
V
GS
=0V
GS
=0V

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