30a02ch Sanyo Semiconductor Corporation, 30a02ch Datasheet
30a02ch
Manufacturer Part Number
30a02ch
Description
Pnp Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.30A02CH.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
30a02ch-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENN7358
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : AL
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
•
•
•
•
Low-frequency Amplifier, high-speed switching,
small motor drive.
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
R CE (sat) typ=580m [I C =0.7A, I B =35mA].
Small ON-resistance (Ron).
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
Tj
f T
General-Purpose Amplifier Applications
Mounted on a ceramic board (600mm
V CB =- -30V, I E =0
V EB =- -4V, I C =0
V CE =- -2V, I C =--10mA
V CE =- -10V, I C =--50mA
V CB =- -10V, f=1MHz
I C =--200mA, I B =--10mA
I C =--200mA, I B =--10mA
30A02CH
Conditions
Package Dimensions
unit : mm
2150A
Conditions
1
3
PNP Epitaxial Planar Silicon Transistor
2
2.9
1.9
0.8mm)
2
0.4
[30A02CH]
min
Low-Frequency
200
O3003 TS IM TA-100124
Ratings
typ
0.15
--110
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Ratings
--0.9
520
4.7
30A02CH
Continued on next page.
--55 to +150
0.05
max
--700
--100
--100
--220
--1.4
700
150
--1.2
--30
--30
500
--5
No.7358-1/4
MHz
Unit
mW
Unit
mA
mV
nA
nA
pF
V
V
V
A
V
C
C
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30a02ch Summary of contents
Page 1
... -4V -2V =--10mA -10V =--50mA Cob -10V, f=1MHz V CE (sat =--200mA =--10mA V BE (sat =--200mA =--10mA PNP Epitaxial Planar Silicon Transistor 30A02CH Low-Frequency [30A02CH] 2.9 0.15 0.4 3 0. Base 2 : Emitter 3 : Collector SANYO : CPH3 Ratings --30 ...
Page 2
... Collector Current 30A02CH Symbol Conditions V (BR)CBO I C =-- (BR)CEO I C =--1mA (BR)EBO I E =-- See specified Test Circuit. t stg See specified Test Circuit See specified Test Circuit. ...
Page 3
... Collector-to-Base Voltage Ron -- I B 100 1k f=1MHz 1 0 --0.1 --1.0 Base Current 30A02CH -- = --1 --0 --1000 --1.0 IT05055 1000 f=1MHz 100 --1.0 ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. 30A02CH PS No.7358-4/4 ...