nt1gt64uh8c0fn Nanya Techology, nt1gt64uh8c0fn Datasheet
nt1gt64uh8c0fn
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nt1gt64uh8c0fn Summary of contents
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... Serial Presence Detect Description NT1GT64UH8C0FN and NT2GT64U8HC0BN are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB)/256Mx64 (2GB) high-speed memory array. NT1GT64UH8C0FN uses eight 64Mx16 84-ball BGA packaged devices and NT2GT64U8HC0BN use sixteen 128Mx8 60-ball BGA packaged devices ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Ordering Information Part Number NT2GT64U8HC0BN –AC DDR2-800 PC2-6400 400MHz (2.5ns @ NT2GT64U8HC0BN –AD DDR2-800 PC2-6400 400MHz (2.5ns @ NT2GT64U8HC0BN –3C DDR2-667 PC2-5300 333MHz (3ns @ NT2GT64U8HC0BN –37B DDR2-533 PC2-4200 266MHz (3.75ns @ NT1GT64UH8C0FN – ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Pin Description CK0, CK1, , Differential Clock Inputs CKE0, CKE1 Clock Enable Row Address Strobe Column Address Strobe Write Enable , Chip Selects A0-A9 A11-A13 Row Address Inputs A0-A9 Column Address Inputs ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM 1GB/2GB DDR2 SDRAM SODIMM Pinout Pin Front Pin Back Pin Front DQS2 REF DQ4 DQ0 6 DQ5 55 DQ18 7 DQ1 DQ19 ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Input/Output Functional Description Symbol Type Polarity The positive line of the differential pair of system clock inputs which drives the input to the Positive CK0, CK1 (SSTL) on-DIMM PLL. All the DDR2 SDRAM address and control inputs are sampled on the rising edge Edge of their associated clocks ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Functional Block Diagram [1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs] REV 1.1 02/2008 6 © NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice. ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Functional Block Diagram [2GB – 2 Ranks, 128Mx8 DDR2 SDRAMs] REV 1.1 02/2008 7 © NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice. ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs) Byte Description 37 Internal Write to Read Command delay (t 38 Internal Read to Precharge delay (t RTP 39 Reserved 40 Extension of Byte 41 t and Byte 42 t ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detec t (2GB – 2 Ranks, 128Mx8 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detec t (2GB – 2 Ranks, 128 DDR2 SDRAMs) Byte Description 37 Internal Write to Read Command delay (t 38 Internal Read to Precharge delay (t RTP 39 Reserved 40 Extension of Byte 41 t and Byte 42 t ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Environmental Requirements Symbol Operating Temperature (ambient) T OPR Operating Humidity (relative) H OPR Storage Temperature T STG Storage Humidity (without condensation) H STG Barometric pressure (operating & storage 9850ft. Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM ODT DC Electrical Characteristics Parameter/Condition Rtt effective impedance value for EMRS(A6,A2)=0,1; 75ohm Rtt effective impedance value for EMRS(A6,A2)=1,0; 150ohm Rtt effective impedance value for EMRS(A6,A2)=1,1; 50ohm Deviation of V with respect to VDDQ/2 M Note1: Test condition for Rtt measurements ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V 0.1V [1GB, 2 Ranks, 64Mx16 DDR2 SDRAMs] CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t IDD0 DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current: one bank ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V 0.1V [2GB, 2 Ranks, 128M x 8 DDR2 SDRAMs] CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t IDD0 DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current: one bank ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V 0.1V; V CASE DDQ DD Symbol Parameter DQ output access time from CK DQS output access time from CK/ ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V 0.1V; V CASE DDQ DD Symbol Parameter Active bank A to Active bank B command t RRD to t CCD Write recovery time ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Package Dimensions [1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs] 6 " %& '( #'( ) * +, - . # ) ', ( #/ & Note: Device position and scale are only for reference. REV 1.1 02/2008 " ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Package Dimensions [2GB – 2 Ranks, 128Mx8 DDR2 SDRAMs] 6 " %& '( #'( ) * +, - . # ) ', ( #/ & Note: Device position and scale are only for reference. REV 1.1 02/2008 " ...
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... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Revision Log Rev Date 0.1 08/2007 Preliminary Release 1.0 01/2008 Official Release 1.1 02/2008 Update New IDD Currents Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd., Kueishan, Taoyuan, 333, Taiwan, R.O.C. ...