nt1gt64uh8c0fn Nanya Techology, nt1gt64uh8c0fn Datasheet

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nt1gt64uh8c0fn

Manufacturer Part Number
nt1gt64uh8c0fn
Description
Based On Ddr2-533/667/800 64mx16 1gb /128mx8 2gb Sdram C-die
Manufacturer
Nanya Techology
Datasheet
NT1GT64UH8C0FN / NT2GT64U8HC0BN
1GB: 128M x 64 / 2GB: 256M x 64
PC2-4200 / PC2-5300 / PC2-6400
Unbuffered DDR2 SO-DIMM
Based on DDR2-533/667/800 64Mx16 (1GB)/128Mx8 (2GB) SDRAM C-Die
Features
• Performance:
DIMM CAS Latency
fck – Clock Freqency
tck – Clock Cycle
Data Transfer Speed
• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
• 1GB: 128Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx16
• 2GB: 256Mx64 Unbuffered DDR2 SO-DIMM based on 128Mx8
• Intended for 266MHz, 333MHz, and 400MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
• Serial Presence Detect
Description
NT1GT64UH8C0FN and NT2GT64U8HC0BN are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual
In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB)/256Mx64 (2GB) high-speed memory array.
NT1GT64UH8C0FN uses eight 64Mx16 84-ball BGA packaged devices and NT2GT64U8HC0BN use sixteen 128Mx8 60-ball BGA
packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of
these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SODIMMs provide a high-performance,
flexible 8-byte interface in a space-saving footprint.
The DIMM is intended for use in applications operating of 266MHz/333MHz/400MHz clock speeds and achieves high-speed data transfer
speed of 533Mbps/667Mbps/800Mbps. Prior to any access operation, the device
programmed into the DIMM by address inputs A0-A12 (1GB) / A0-A13 (2GB) and I/O inputs BA0, BA1 and BA2 using the mode register set
cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data are
programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.1
02/2008
DDR2 SDRAM C Die devices.
DDR2 SDRAM C Die devices.
clock edge
DD
Speed Sort
= V
DDQ
= 1.8V
0.1V
PC2-4200
-37B
3.75
266
533
4
PC2-5300
-3C
333
667
5
3
PC2-6400
-AD
400
800
2.5
6
PC2-6400
-AC
400
800
2.5
1
5
• Programmable Operation:
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/10/2 Addressing (1GB)
• 14/10/2 Addressing (2GB)
• 7.8 µs Max. Average Periodic Refresh Interval
• Gold contacts
• 1GB module’s SDRAMs are 84-ball BGA Package
• 2GB module’s SDRAMs are 60-ball BGA Package
• RoHS compliance
- DIMM
- DIMM
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
MHz
ns
Mbps
Unit
NANYA reserves the right to change products and specifications without notice.
latency and burst/length/operation type must be
Latency: 3, 4, 5 (-37B/-3C/-AC)
Latency: 4, 5, 6 (-AD)
© NANYA TECHNOLOGY CORPORATION

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nt1gt64uh8c0fn Summary of contents

Page 1

... Serial Presence Detect Description NT1GT64UH8C0FN and NT2GT64U8HC0BN are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB)/256Mx64 (2GB) high-speed memory array. NT1GT64UH8C0FN uses eight 64Mx16 84-ball BGA packaged devices and NT2GT64U8HC0BN use sixteen 128Mx8 60-ball BGA packaged devices ...

Page 2

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Ordering Information Part Number NT2GT64U8HC0BN –AC DDR2-800 PC2-6400 400MHz (2.5ns @ NT2GT64U8HC0BN –AD DDR2-800 PC2-6400 400MHz (2.5ns @ NT2GT64U8HC0BN –3C DDR2-667 PC2-5300 333MHz (3ns @ NT2GT64U8HC0BN –37B DDR2-533 PC2-4200 266MHz (3.75ns @ NT1GT64UH8C0FN – ...

Page 3

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Pin Description CK0, CK1, , Differential Clock Inputs CKE0, CKE1 Clock Enable Row Address Strobe Column Address Strobe Write Enable , Chip Selects A0-A9 A11-A13 Row Address Inputs A0-A9 Column Address Inputs ...

Page 4

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM 1GB/2GB DDR2 SDRAM SODIMM Pinout Pin Front Pin Back Pin Front DQS2 REF DQ4 DQ0 6 DQ5 55 DQ18 7 DQ1 DQ19 ...

Page 5

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Input/Output Functional Description Symbol Type Polarity The positive line of the differential pair of system clock inputs which drives the input to the Positive CK0, CK1 (SSTL) on-DIMM PLL. All the DDR2 SDRAM address and control inputs are sampled on the rising edge Edge of their associated clocks ...

Page 6

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Functional Block Diagram [1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs] REV 1.1 02/2008 6 © NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice. ...

Page 7

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Functional Block Diagram [2GB – 2 Ranks, 128Mx8 DDR2 SDRAMs] REV 1.1 02/2008 7 © NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice. ...

Page 8

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly ...

Page 9

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs) Byte Description 37 Internal Write to Read Command delay (t 38 Internal Read to Precharge delay (t RTP 39 Reserved 40 Extension of Byte 41 t and Byte 42 t ...

Page 10

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detec t (2GB – 2 Ranks, 128Mx8 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly ...

Page 11

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detec t (2GB – 2 Ranks, 128 DDR2 SDRAMs) Byte Description 37 Internal Write to Read Command delay (t 38 Internal Read to Precharge delay (t RTP 39 Reserved 40 Extension of Byte 41 t and Byte 42 t ...

Page 12

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Environmental Requirements Symbol Operating Temperature (ambient) T OPR Operating Humidity (relative) H OPR Storage Temperature T STG Storage Humidity (without condensation) H STG Barometric pressure (operating & storage 9850ft. Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied ...

Page 13

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM ODT DC Electrical Characteristics Parameter/Condition Rtt effective impedance value for EMRS(A6,A2)=0,1; 75ohm Rtt effective impedance value for EMRS(A6,A2)=1,0; 150ohm Rtt effective impedance value for EMRS(A6,A2)=1,1; 50ohm Deviation of V with respect to VDDQ/2 M Note1: Test condition for Rtt measurements ...

Page 14

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V 0.1V [1GB, 2 Ranks, 64Mx16 DDR2 SDRAMs] CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t IDD0 DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current: one bank ...

Page 15

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V 0.1V [2GB, 2 Ranks, 128M x 8 DDR2 SDRAMs] CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t IDD0 DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current: one bank ...

Page 16

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V 0.1V; V CASE DDQ DD Symbol Parameter DQ output access time from CK DQS output access time from CK/ ...

Page 17

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V 0.1V; V CASE DDQ DD Symbol Parameter Active bank A to Active bank B command t RRD to t CCD Write recovery time ...

Page 18

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Package Dimensions [1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs] 6 " %& '( #'( ) * +, - . # ) ', ( #/ & Note: Device position and scale are only for reference. REV 1.1 02/2008 " ...

Page 19

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Package Dimensions [2GB – 2 Ranks, 128Mx8 DDR2 SDRAMs] 6 " %& '( #'( ) * +, - . # ) ', ( #/ & Note: Device position and scale are only for reference. REV 1.1 02/2008 " ...

Page 20

... NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Revision Log Rev Date 0.1 08/2007 Preliminary Release 1.0 01/2008 Official Release 1.1 02/2008 Update New IDD Currents Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd., Kueishan, Taoyuan, 333, Taiwan, R.O.C. ...

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