nt1gt64uh8d0fs-ad Nanya Techology, nt1gt64uh8d0fs-ad Datasheet

nt1gt64uh8d0fs-ad

Manufacturer Part Number

nt1gt64uh8d0fs-ad

Description

Pc2-4200 / Pc2-5300 / Pc2-6400 Unbuffered Ddr2 So-dimm

Manufacturer

Nanya Techology

Datasheet

1.NT1GT64UH8D0FS-AD.pdf (25 pages)

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NT512T64UH4D0FN / NT1GT64UH8D0FN / NT2GT64U8HD0BN

NT512T64UH4D0FS / NT1GT64UH8D0FS / NT2GT64U8HD0BS

512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64

PC2-4200 / PC2-5300 / PC2-6400

Unbuffered DDR2 SO-DIMM

Based on DDR2-533/667/800 64Mx16 (512MB)/64Mx16 (1GB)/128Mx8 (2GB) SDRAM D-Die

Features

• Performance:

DIMM CAS Latency

fck – Clock Freqency

tck – Clock Cycle

fDQ – DQ Burst Freqency

• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)

• 512MB: 64Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx16

• 1GB: 128Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx16

• 2GB: 256Mx64 Unbuffered DDR2 SO-DIMM based on 128Mx8

• Intended for 266MHz, 333MHz, and 400MHz applications

• Inputs and outputs are SSTL-18 compatible

• V

• SDRAMs have 8 internal banks for concurrent operation

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock transitions.

• Address and control signals are fully synchronous to positive

• Auto Refresh (CBR) and Self Refresh Modes

• Automatic and controlled precharge commands

Description

NT512T64UH4D0FN, NT512T64UH4D0FS, NT1GT64UH8D0FN, NT1GT64UH8D0FS, NT2GT64U8HD0BN and NT2GT64U8HD0BS are

unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as

one rank (512MB)/two ranks (1GB/2GB) of 64Mx64 (512MB)/128Mx64 (1GB)/256Mx64 (2GB) high-speed memory array.

NT512T64UH4D0FN and NT512T64UH4D0FS use four 64Mx16 84-ball BGA packaged devices; NT1GT64UH8D0FN and

NT1GT64UH8D0FS use eight 64Mx16 84-ball BGA packaged devices; NT2GT64U8HD0BN and NT2GT64U8HD0BS use sixteen 128Mx8

60-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs.

The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SODIMMs provide a

high-performance, flexible 8-byte interface in a space-saving footprint.

The DIMM is intended for use in applications operating of 266MHz (333MHz or 400MHz) clock speeds and achieves high-speed data

transfer rates of 533Mbps (667Mbps or 800Mbps). Prior to any access operation, the device

must be programmed into the DIMM by address inputs A0-A12 (512MB/1GB)/A0-A13 (2GB) and I/O inputs BA0, BA1 and BA2 using the

mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data are

programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

REV 1.2

03/2008

DDR2 SDRAM D Die devices.

clock edge

= V

Speed Sort

DDQ

= 1.8V

0.1V

PC2-4200

-37B

3.75

266

533

PC2-5300

-3C

333

667

PC2-6400

-AD

400

800

2.5

PC2-6400

• Programmable Operation:

• 13/10/1 Addressing (512MB)

• 13/10/2 Addressing (1GB)

• 14/10/2 Addressing (2GB)

• 7.8 µs Max. Average Periodic Refresh Interval

• Serial Presence Detect

• Gold contacts

• 512MB/1GB module’s SDRAMs are 84-ball BGA Package

• 2GB module’s SDRAMs are 60-ball BGA Package

• RoHS compliance

• Halogen free product:

-AC

400

800

2.5

- DIMM

- Burst Type: Sequential or Interleave

- Burst Length: 4, 8

- Operation: Burst Read and Write

- NT512T64UH4D0FS

- NT1GT64UH8D0FS

- NT2GT64U8HD0BS

Mbps

MHz

Unit

NANYA reserves the right to change products and specifications without notice.

Latency: 3, 4, 5 (-37B/-3C/-AC)

Latency: 4, 5, 6 (-AD)

latency and burst/length/operation type

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