nt1gt72u89d0by Nanya Techology, nt1gt72u89d0by Datasheet

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nt1gt72u89d0by

Manufacturer Part Number
nt1gt72u89d0by
Description
240pin Unbuffered Ddr2 Sdram Module With Ecc Based On 128mx8 Ddr2 Sdram D-die
Manufacturer
Nanya Techology
Datasheet
NT1GT72U89D0BY / NT2GT72U8PD0BY
1GB: 128M x 72 / 2GB: 256M x 72
Unbuffered DDR2 SDRAM DIMM with ECC
240pin Unbuffered DDR2 SDRAM MODULE with ECC
Based on 128Mx8 DDR2 SDRAM D-die
Features
Performance:
• JEDEC Standard 240-pin Dual In-Line Memory Module
• 128Mx72 and 256Mx72 DDR2 Unbuffered DIMM based on
• Double Data Rate architecture; two data transfer per clock cycle
• Differential bi-directional data strobe (DQS & )
• DQS is edge-aligned with data for reads and is center-aligned
• Differential clock inputs (CK & )
• Intended for 333MHz/400MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
• 7.8 μs Max. Average Periodic Refresh Interval
Description
NT1GT72U89D0BY and NT2GT72U8PD0BY are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Unbuffered Dual In-Line
Memory Module with ECC (UDIMM/ECC), organized as one rank 128Mx72 and two ranks 256Mx72 high-speed memory array. Modules
use nine 128Mx8 DDR2 SDRAMs and eighteen 128Mx8 DDR2 SDRAMs in BGA packages. These DIMMs are manufactured using raw
cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation
between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving
footprint.
The DIMM is intended for use in applications operating up to 333MHz (or 400MHz) clock speeds and achieves high-speed data transfer
rates of up to 667Mbps (or 800Mbps). Prior to any access operation, the device  latency and burst / length /operation type must be
programmed into the DIMM by address inputs A0-A13 and I/O inputs BA0, BA1 and BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.0
03/2008
f
f
t
128Mx8 DDR2 SDRAM D-die
with data for writes
DD
CK
CK
DQ
DIMM  Latency
= V
Clock Frequency
Clock Cycle
DQ Burst Frequency
DDQ
Speed Sort
= 1.8V ± 0.1V
PC2-5300
-3C
333
667
5
3
PC2-6400
-AD
400
800
2.5
6
PC2-6400
-AC
400
800
2.5
5
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
• Programmable Operation:
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 14/10/1 Addressing (row/column/rank) – 1GB
• 14/10/2 Addressing (row/column/rank) – 2GB
• Serial Presence Detect
• On Die Termination (ODT)
• OCD impedance adjustment
• Gold contacts
• SDRAMs in 60-ball BGA Package
• RoHs Compliance
- Device  Latency: 3, 4, 5 (-3C/-AC); 4, 5, 6 (-AD)
- Burst Length: 4, 8
Mbps
MHz
Unit
ns
© NANYA TECHNOLOGY CORP.

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nt1gt72u89d0by Summary of contents

Page 1

... Max. Average Periodic Refresh Interval Description NT1GT72U89D0BY and NT2GT72U8PD0BY are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Unbuffered Dual In-Line Memory Module with ECC (UDIMM/ECC), organized as one rank 128Mx72 and two ranks 256Mx72 high-speed memory array. Modules use nine 128Mx8 DDR2 SDRAMs and eighteen 128Mx8 DDR2 SDRAMs in BGA packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” ...

Page 2

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Ordering Information Part Number NT1GT72U89D0BY-3C 333MHz (3.00ns @ NT1GT72U89D0BY-AD 400MHz (2.50ns @ NT1GT72U89D0BY-AC 400MHz (2.50ns @ NT2GT72U8PD0BY-3C 333MHz (3.00ns @ NT2GT72U8PD0BY-AD 400MHz (2.50ns @ NT2GT72U8PD0BY-AC 400MHz (2.50ns @ ...

Page 3

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Pinout Pin Front Pin Front CB0 REF CB1 SS 3 DQ0  4 DQ1 DQS8 SS  ...

Page 4

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Input/Output Functional Description Symbol Type Polarity Positive CK0, CK1, CK2 (SSTL) Edge Negative , ,  (SSTL) Edge Active CKE0, CKE1 ...

Page 5

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Functional Block Diagram (1GB, 1 Rank, 128Mx8 DDR2 SDRAMs DQS0 DQS DQS DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 DQS1 DQS 1 ...

Page 6

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Functional Block Diagram (2GB, 2 Ranks, 128Mx8 DDR2 SDRAMs DQS0 DQS DQS CS DQS DQ0 I/O 0 I/O 0 DQ1 I/O 1 I/O 1 DQ2 I/O 2 I/O 2 DQ3 I DQ4 I/O 4 I/O 4 DQ5 ...

Page 7

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect -- Part (1GB) 128Mx72 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 128Mx8, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 8

... SPD Revision 63 Checksum for bytes 0-62 64-71 Manufacture’s JEDEC ID Code 72 Module Manufacturing Location 73-91 Module Part number 92-255 Reserved Note 1: NT1GT72U89D0BY-3C  4E543147543732553839443042592D33432020 NT1GT72U89D0BY-AD  4E543147543732553839443042592D41442020 NT1GT72U89D0BY-AC  4E543147543732553839443042592D41432020 REV 1.0 03/2008 Serial PD Data Entry SPD Entry Value (Hexadecimal) 667 800 800 667 -3C -AD ...

Page 9

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect -- Part (2GB) 256Mx72 2 RANKs UNBUFFERED DDR2 SDRAM DIMM based on 128Mx8, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 10

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect -- Part (2GB) 256Mx72 2 RANKs UNBUFFERED DDR2 SDRAM DIMM based on 128Mx8, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 40 Extension of Byte 41 tRC and Byte 42 tRFC ...

Page 11

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Absolute Maximum Ratings Symbol Voltage on any pin relative to Vss OUT V Voltage on V supply relative to Vss DDQ DDQ V Voltage on V supply relative to Vss DDQL DDQL Voltage on VDD supply relative to Vss ...

Page 12

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC DC Electrical Characteristics and Operating Conditions ( ° ° 1.8V ± 0.1V; V CASE DDQ Symbol V Supply Voltage DD V Supply Voltage for Output DDQ V Supply Voltage for V DDL DDQL V I/O Reference Voltage ...

Page 13

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (1GB, 1 Rank, 128Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; ...

Page 14

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (2GB, 2 Ranks, 128Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; ...

Page 15

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ Symbol Parameter t Clock Cycle Time (Average high-level width (Average low-level width (Average) ...

Page 16

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ Symbol Parameter t Exit active power down to read command XARD t Exit active power down to read command ...

Page 17

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Package Dimensions (Raw Card Version: F, 1GB, 1 Rank, 128Mx8 DDR2 SDRAMs) 133 . 35 5. 250  2.5 0. 098 63 480 Detail +/- 0.1 0.059 +/- 0. 004 Note: All dimensions are typical with tolerances of +/- 0. 15 (0. 006 ) unless otherwise stated . ...

Page 18

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Package Dimensions (Raw Card Version: G, 2GB, 2 Ranks, 128Mx8 DDR2 SDRAMs) 133 . 35 5. 250  2.5 0. 098 63 480 Detail +/- 0.1 0. 059 +/- 0. 004 Note: All dimensions are typical with tolerances of +/- 0. 15 (0. 006 ) unless otherwise stated . ...

Page 19

... NT1GT72U89D0BY / NT2GT72U8PD0BY 1GB: 128M 2GB: 256M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Revision Log Rev Date 0.1 02/2008 Preliminary Edition 1.0 03/2008 Official Release REV 1.0 03/2008 Modification 19 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. © NANYA TECHNOLOGY CORP. ...

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