nt1gt64u88d0by Nanya Techology, nt1gt64u88d0by Datasheet

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nt1gt64u88d0by

Manufacturer Part Number
nt1gt64u88d0by
Description
240pin Unbuffered Ddr2 Sdram Module
Manufacturer
Nanya Techology
Datasheet
NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY
512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64
Unbuffered DDR2 SDRAM DIMM
240pin Unbuffered DDR2 SDRAM MODULE
Based on 64Mx16 DDR2 SDRAM D-die (512MB)
Based on 128Mx8 DDR2 SDRAM D-die (1GB/2GB)
Features
Performance:
• JEDEC Standard 240-pin Dual In-Line Memory Module
• 64Mx64 DDR2 Unbuffered DIMM based on Nanya 64Mx16
• 128Mx64 and 256Mx64 DDR2 Unbuffered DIMM based on
• Double Data Rate architecture; two data transfer per clock cycle
• Differential bi-directional data strobe (DQS & )
• DQS is edge-aligned with data for reads and is center-aligned
• Differential clock inputs (CK & )
• Intended for 333MHz/400MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
• 7.8 μs Max. Average Periodic Refresh Interval
Description
NT512T64UH4D0FY, NT1GT64U88D0BY and NT2GT64U8HD0BY are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM
Unbuffered Dual In-Line Memory Module (UDIMM), organized as one rank 64Mx64 (512MB), one rank 128Mx64 (1GB) and two ranks
256Mx64 (2GB) high-speed memory array. NT512T64UH4D0FY use four 64Mx16 DDR2 SDRAMs, NT1GT64U88D0BY use eight
128Mx8 DDR2 SDRAMs and NT2GT64U8HD0BY use sixteen 128Mx8 DDR2 SDRAMs in BGA packages. These DIMMs are
manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes
electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25”
long space-saving footprint.
The DIMM is intended for use in applications operating up to 333MHz (or 400MHz) clock speeds and achieves high-speed data transfer
rates of up to 667Mbps (or 800Mbps). Prior to any access operation, the device  latency and burst / length /operation type must be
programmed into the DIMM by address inputs A0-A12 (512MB) / A0-A13 (1GB/2GB) and I/O inputs BA0, BA1 and BA2 using the mode
register set cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.0
03/2008
f
f
t
DDR2 SDRAM D-die component – (512MB)
Nanya 128Mx8 DDR2 SDRAM D-die component – (1GB/2GB)
with data for writes
CK
CK
DQ
DD
DIMM  Latency
= V
Clock Frequency
Clock Cycle
DQ Burst Frequency
DDQ
Speed Sort
= 1.8V ± 0.1V
PC2-5300
-3C
333
667
5
3
PC2-6400
-AD
400
800
2.5
6
PC2-6400
-AC
400
800
2.5
1
5
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
• Programmable Operation:
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/10/1 Addressing (row/column/rank) – 512MB
• 14/10/1 Addressing (row/column/rank) – 1GB
• 14/10/2 Addressing (row/column/rank) – 2GB
• Serial Presence Detect
• On Die Termination (ODT)
• OCD impedance adjustment
• Gold contacts
• SDRAMs in 84-ball BGA Package – 512MB
• SDRAMs in 60-ball BGA Package – 1GB/2GB
• RoHs Compliance
- Device  Latency: 3, 4, 5 (-3C/-AC); 4, 5, 6 (-AD)
- Burst Length: 4, 8
Mbps
MHz
Unit
ns
© NANYA TECHNOLOGY CORP.

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nt1gt64u88d0by Summary of contents

Page 1

... Unbuffered Dual In-Line Memory Module (UDIMM), organized as one rank 64Mx64 (512MB), one rank 128Mx64 (1GB) and two ranks 256Mx64 (2GB) high-speed memory array. NT512T64UH4D0FY use four 64Mx16 DDR2 SDRAMs, NT1GT64U88D0BY use eight 128Mx8 DDR2 SDRAMs and NT2GT64U8HD0BY use sixteen 128Mx8 DDR2 SDRAMs in BGA packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” ...

Page 2

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Ordering Information Part Number NT512T64UH4D0FY-3C 333MHz (3.00ns @ NT512T64UH4D0FY-AD 400MHz (2.50ns @ NT512T64UH4D0FY-AC 400MHz (2.50ns @ NT1GT64U88D0BY-3C 333MHz (3.00ns @ NT1GT64U88D0BY-AD 400MHz (2.50ns @ NT1GT64U88D0BY-AC 400MHz (2 ...

Page 3

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Pinout Pin Front Pin Front REF DQ0 DQ1 45 NC  ...

Page 4

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Input/Output Functional Description Symbol Type Polarity Positive CK0, CK1, CK2 (SSTL) Edge Negative , ,  (SSTL) Edge Active ...

Page 5

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Functional Block Diagram (512MB, 1 Rank, 64Mx16 DDR2 SDRAMs LDQS DQS0 LDQS DQS0 LDM I DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 DQ5 I/O 5 DQ6 I/O 6 DQ7 ...

Page 6

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Functional Block Diagram (1GB, 1 Rank, 128Mx8 DDR2 SDRAMs DQS 0 DQS0 DQS DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 D0 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 ...

Page 7

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Functional Block Diagram (2GB, 2 Ranks, 128Mx8 DDR2 SDRAMs DQS0 DQS DQS CS DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 ...

Page 8

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- Part (512MB) 64Mx64 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx16, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 9

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- Part (512MB) 64Mx64 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx16, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 40 Extension of Byte 41 tRC and Byte 42 tRFC ...

Page 10

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- Part (1GB) 128Mx64 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 128Mx8, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 11

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- Part (1GB) 128Mx64 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 128Mx8, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 40 Extension of Byte 41 tRC and Byte 42 tRFC ...

Page 12

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- Part (2GB) 256Mx64 2 RANKs UNBUFFERED DDR2 SDRAM DIMM based on 128Mx8, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 13

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- Part (2GB) 256Mx64 2 RANKs UNBUFFERED DDR2 SDRAM DIMM based on 128Mx8, 8Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 40 Extension of Byte 41 tRC and Byte 42 tRFC ...

Page 14

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Absolute Maximum Ratings Symbol Voltage on any pin relative to Vss OUT V Voltage on V supply relative to Vss DDQ DDQ V Voltage on V supply relative to Vss DDQL DDQL ...

Page 15

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM DC Electrical Characteristics and Operating Conditions ( ° ° 1.8V ± 0.1V; V CASE DDQ Symbol V Supply Voltage DD V Supply Voltage for Output DDQ V Supply Voltage for V DDL DDQL ...

Page 16

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (512MB, 1 Rank, 64Mx16 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; address DD0 (MIN) ...

Page 17

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (1GB, 1 Rank, 128Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; address DD0 (MIN) ...

Page 18

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (2GB, 2 Ranks, 128Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; address DD0 (MIN) ...

Page 19

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ Symbol Parameter t Clock Cycle Time (Average high-level width (Average low-level width (Average) ...

Page 20

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ Symbol Parameter t Exit active power down to read command XARD t Exit active power down to read command ...

Page 21

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Package Dimensions (Raw Card Version: C, 512MB, 1 Rank, 64Mx16 DDR2 SDRAMs) 133 . 35 5. 250  2.5 0. 098 63 480 Detail +/- 0.1 0. 059 +/- 0.004 Note: All dimensions are typical with tolerances of +/- 0 ...

Page 22

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Package Dimensions (Raw Card Version: D, 1GB, 1 Rank, 128Mx8 DDR2 SDRAMs) 133 . 35 5. 250  2.5 0. 098 63 480 Detail +/- 0.1 0. 059 +/- 0. 004 Note: All dimensions are typical with tolerances of +/- 0 ...

Page 23

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Package Dimensions (Raw Card Version: E, 2GB, 2 Ranks, 128Mx8 DDR2 SDRAMs) 133 . 35 5. 250  2.5 0. 098 63 480 Detail +/- 0.1 0.059 +/- 0. 004 Note: All dimensions are typical with tolerances of +/- 0 ...

Page 24

... NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M 1GB: 128M 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM Revision Log Rev Date 0.1 02/2008 Preliminary Edition 1.0 03/2008 Official Release REV 1.0 03/2008 Modification 24 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

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