nt1gt72u8pa1by Nanya Techology, nt1gt72u8pa1by Datasheet

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... Address and control signals are fully synchronous to positive Description NT512T72U89A1BY and NT1GT72U8PA1BY are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as a one-rank 64Mx72 and two ranks 128Mx72 high-speed memory array. Modules use nine 64Mx8 (NT512T72U89A1BY) and eighteen 64Mx8 (NT1GT72U8PA1BY) DDR2 SDRAMs in FBGA packages ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Pin Description CK0, Differential Clock Inputs CKE0, CKE1 Clock Enable Row Address Strobe Column Address Strobe Write Enable , Chip Selects A0-A9, A11-A13 Address Inputs A10/AP Column Address Input/Auto-precharge ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Pinout Pin Front Pin Front CB0 REF CB1 SS 3 DQ0 DQ1 DQS8 DQS0 48 CB2 CB3 SS 9 DQ2 ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Input/Output Functional Description Symbol Type Polarity Positive CK0, CK1, CK2 (SSTL) Edge Negative , , (SSTL) Edge Active CKE0, CKE1 (SSTL) High Active , (SSTL) Low Active , , (SSTL) Low V Supply ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Functional Block Diagram (512MB, 1 Rank, 64Mx8 DDR SDRAMs " $% " & $% & " $% & " & " $% & " $% & " & ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Functional Block Diagram (1GB, 2 Ranks, 64Mx8 DDR SDRAMs " $% " & $% & " $% & " & " $% & " $% & " & ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect (512MB) -- 64Mx72 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect (512MB) -- 64Mx72 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 41 Minimum Core Cycle Time (tRC) 42 Min. Auto Refresh Command Cycle Time (tRFC) ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect (1GB) -- 128Mx72 2 RANKs UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect (1GB) -- 128Mx72 2 RANKs UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 41 Minimum Core Cycle Time (tRC) 42 Min. Auto Refresh Command Cycle Time (tRFC) ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Absolute Maximum Ratings Symbol Voltage on I/O pins relative to Vss OUT Voltage on VDD supply relative to Vss V DD Voltage on VDDQ supply relative to Vss V DDQ Storage Humidity (without condensation) H STG Note: Stresses greater than those listed under “ ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (512MB, 1 Rank, 64Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; address DD0 (MIN) ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (1GB, 2 Ranks, 64Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; address DD0 (MIN) ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter t DQ output access time from CK DQS output access time from CK/ ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter t Write recovery time without Auto-Precharge WR WR Write recovery time with Auto-Precharge ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Package Dimensions (512MB, 1 Rank, 64Mx8 DDR SDRAMs ##+#" "+ " # +#" "+ ' +" &#+ + +" " +" " REV 1.3 08/2006 +!" " " ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Package Dimensions (1GB, 2 Ranks, 64Mx8 DDR SDRAMs ##+#" "+ " # +#" "+ ' +" &#+ + +" " +" " REV 1.3 08/2006 +!" " " ...

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... NT512T72U89A1BY / NT1GT72U8PA1BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Revision Log Rev Date 0.1 07/2005 Preliminary Release 1.0 08/2005 Official Release 1.1 11/2005 Update SPD. 1.2 03/2006 Update Package Dimensions. 1.3 08/2006 Update Package Dimensions. REV 1.3 08/2006 Modification 18 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...