NT2GC64B8HC0NF Nanya Techology, NT2GC64B8HC0NF Datasheet

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NT2GC64B8HC0NF

Manufacturer Part Number
NT2GC64B8HC0NF
Description
Un-buffered Ddr3 Sdram Dimm
Manufacturer
Nanya Techology
Datasheet
PC3-8500 / PC3-10600
Un-buffered DDR3 SDRAM DIMM
NT2GC64B8HC0NF
Based on DDR3-1066/1333 128Mx8 SDRAM C-Die
Features
•Performance:
DIMM CAS Latency
fck – Clock Frequency
tck – Clock Cycle
fDQ – DQ Burst Freqency
• 240-Pin Dual In-Line Memory Module (UDIMM)
• 128Mx64 and 256Mx64 DDR3 Unbuffered DIMM based on
• Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
• V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
• Nominal and Dynamic On-Die Termination support
• Halogen free product
Description
NT2GC64B8HC0NF is 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM),
organized as two ranks of 256Mx64 (2GB) high-speed memory array. Modules use sixteen 128Mx8 (2GB) 78-ball BGA packaged devices.
These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design
files minimizes electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte
interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A13 and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.0
12/2009
128Mx8 DDR3 SDRAM A-Die devices.
clock edge
DD
= V
Speed Sort
DDQ
= 1.5V ±0.075V
PC3-8500
1.875
1066
-BE
533
7
PC3-10600
1333
-CG
667
1.5
9
Mbps
MHz
Unit
ns
1
• Programmable Operation:
• Two different termination values (Rtt_Nom & Rtt_WR)
• 14/10/2 (row/column/rank) Addressing for 2GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
• SDRAMs are in 78-ball BGA Package
• RoHS compliance
- DIMM  Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION

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NT2GC64B8HC0NF Summary of contents

Page 1

... Halogen free product Description NT2GC64B8HC0NF is 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as two ranks of 256Mx64 (2GB) high-speed memory array. Modules use sixteen 128Mx8 (2GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” ...

Page 2

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Ordering Information Part Number NT2GC64B8HC0NF-BE DDR3-1066 NT2GC64B8HC0NF-CG DDR3-1333 Pin Description Pin Name Description CK0, CK1 Clock Inputs, positive line ,  Clock Inputs, negative line CKE0, CKE1 Clock Enable  ...

Page 3

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF DDR3 SDRAM Pin Assignment Pin Front Pin Back Pin 1 V 121 V 31 REFDQ 122 DQ4 DQ0 123 DQ5 33 4 DQ1 124 125 DM0 35 SS  126 ...

Page 4

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Input/Output Functional Description Symbol Type Polarity CK0, CK1 Cross Input ,  point Active CKE0, CKE1 Input High Active ,  Input Low Active   ...

Page 5

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Functional Block Diagram – [2GB 2 Ranks, 128Mx8 DDR3 SDRAMs]    DQS0 DM0 DM CS DQS DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I  ...

Page 6

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Serial Presence Detect (Part [2GB – 2 Ranks, 128Mx8 DDR3 SDRAMs] Byte Description 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type 3 Module type (form factor) 4 SDRAM Device density and banks 5 SDRAM device row and column count ...

Page 7

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Serial Presence Detect (Part [2GB – 2 Ranks, 128Mx8 DDR3 SDRAMs] Byte Description 128-145 Module part number 146 Module die revision 147 Module PCB revision DRAM device 148-149 manufacturer ID 150-175 Manufacturer reserved 176-255 Customer reserved REV 1 ...

Page 8

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Environmental Requirements Symbol Module Operating Temperature Range (ambient) T OPR Operating Humidity (relative) H OPR Storage Temperature (Plastic) T STG Storage Humidity (without condensation) H STG Barometric Pressure (operating & storage) P BAR Note: 1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and device functional operation at or above the conditions indicated is not implied ...

Page 9

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Single-Ended AC and DC Input Levels for Command and Address Symbol Parameter VIH.CA(DC) DC Input Logic High VIL.CA(DC) DC Input Logic Low VIH.CA(AC) AC Input Logic High VIL.CA(AC) AC Input Logic Low VIH.CA(AC150) AC Input Logic High VIL.CA(AC150) AC Input Logic Low ...

Page 10

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Operating, Standby, and Refresh Currents = 1.5V ± 0.075V [2GB – 2 Ranks, 128Mx8 DDR3 SDRAMs ° ° CASE DDQ DD Symbol Operating One Bank Active-Precharge Current IDD0 Operating One Bank Active-Read-Precharge Current IDD1 Precharge Power-Down Current Slow Exit ...

Page 11

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Standard Speed Bins Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay PRE command period ACT to ACT or REF command period ACT to PRE command period CL CWL 7 7 ...

Page 12

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF AC Timing Specifications for DDR3 SDRAM Devices Used on Module Symbol Parameter Clock Timing tCK(DLL_OF Minimum Clock Cycle Time (DLL off mode) tCK(avg) Average Clock Period(Refer to "Standard Speed tCH(avg) Average high pulse width tCL(avg) Average low pulse width ...

Page 13

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Symbol Parameter Command and Address Timing tDLLK DLL Locking time Internal READ command to PRECHARGE tRTP Command delay Delay from start of internal write transaction to tWTR internal read command tWR WRITE recovery time tMRD Mode Register Set command cycle time ...

Page 14

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Symbol Parameter Command and Address Timing tDLLK DLL Locking time Internal READ command to PRECHARGE tRTP Command delay Delay from start of internal write transaction to tWTR internal read command tWR WRITE recovery time tMRD Mode Register Set command cycle time ...

Page 15

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Package Dimensions [NT2GC64B8HC0NF, 2GB – 2 Ranks, 128Mx8 DDR3 SDRAMs] 5.175 47.00 Detail A 2.50 1.50 +/- 0.10 Units: Millimeters Note: Device position and scale are only for reference. Revision Log REV 1.0 12/2009 FRONT 133.35 +/- 0.15 Detail A 71.00 5.00 BACK Detail B 0.80 +/- 0.05 1.00 Pitch 15 NANYA reserves the right to change products and specifications without notice. ...

Page 16

... PC3-8500 / PC3-10600 Un-buffered DDR3 SDRAM DIMM NT2GC64B8HC0NF Rev Date 0.1 10/2009 Preliminary Release 1.0 12/2009 Official Release Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd., Kueishan, Taoyuan, 333, Taiwan, R.O.C. Tel: +886-3-328-1688 Please visit our home page for more information: Printed in Taiwan © ...

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