nt1gt64uh8g0fs Nanya Techology, nt1gt64uh8g0fs Datasheet
nt1gt64uh8g0fs
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nt1gt64uh8g0fs Summary of contents
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... Auto Refresh (CBR) and Self Refresh Modes Description NT1GT64UH8G0FS / NT2GT64U8HG0BS are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB)/256Mx64 (2GB) high-speed memory array. NT1GT64UH8G0FS uses eight 64Mx16 84-ball BGA packaged devices and NT2GT64U8HG0BS uses sixteen 128Mx8 60-ball BGA packaged devices ...
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... Unbuffered DDR2 SO-DIMM Ordering Information Part Number NT2GT64U8HG0BS - AD DDR2-800 NT2GT64U8HG0BS - 3C DDR2-667 NT1GT64UH8G0FS - AD DDR2-800 NT1GT64UH8G0FS - 3C DDR2-667 Pin Description CK0, CK1, , Differential Clock Inputs CKE0, CKE1 Clock Enable Row Address Strobe ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Pinout Pin Front Pin Back Pin REF DQ4 DQ0 6 DQ5 55 7 DQ1 DM0 59 SS ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Input/Output Functional Description Symbol Type Polarity Positive CK0, CK1 (SSTL) Edge Negative , (SSTL) Edge Active CKE0, CKE1 (SSTL) High Active , ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Functional Block Diagram [1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs] 3 Ohms +/- 5% ODT1 ODT0 CKE1 CKE0 ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Functional Block Diagram [2GB – 2 Ranks, 128M x8 DDR2 SDRAMs] 3 Ohms +/- 5% ODT1 ODT0 CKE1 CKE0 CS1 CS0 CS0 CKE0 DQS DQS0 DQS DQS0 DM0 DM DQ0 DQ1 DQ2 ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs) Byte Description 37 Internal Write to Read Command delay (t 38 Internal Read to Precharge delay (t 39 Reserved 40 Extension of Byte 41 t and Byte 42 t ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detec t (2GB – 2 Ranks, 128Mx8 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detec t (2GB – 2 Ranks, 128 DDR2 SDRAMs) Byte Description 37 Internal Write to Read Command delay (t 38 Internal Read to Precharge delay (t 39 Reserved 40 Extension of Byte 41 t and Byte 42 t ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Environmental Requirements Symbol Operating Temperature (ambient) T OPR Operating Humidity (relative) H OPR Storage Temperature T STG Storage Humidity (without condensation) H STG Barometric pressure (operating & storage 9850ft. Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only and device functional operation at or above the conditions indicated is not implied ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM ODT DC Electrical Characteristics Parameter/Condition Rtt effective impedance value for EMRS(A6,A2)=0,1; 75ohm Rtt effective impedance value for EMRS(A6,A2)=1,0; 150ohm Rtt effective impedance value for EMRS(A6,A2)=1,1; 50ohm Deviation of V with respect to VDDQ/2 M Note1: Test condition for Rtt measurements ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V [1GB, 2 Ranks, 64Mx16 DDR2 SDRAMs] CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t IDD0 ; DQ, DM, and DQS inputs changing twice per clock cycle; address ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V [2GB, 2 Ranks, 128M x 8 DDR2 SDRAMs] CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t IDD0 ; DQ, DM, and DQS inputs changing twice per clock cycle; address ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ Symbol Parameter DQ output access time from CK/ DQS output access time from CK/ ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ Symbol Active bank A to Active bank B command t RRD to ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Package Dimensions [1GB – 2 Ranks, 64Mx16 DDR2 SDRAMs] (2X) 1. 2.15 11.40 4.20 2.70 Detail A 4.00 +/- 0.10 1.00 +/- 0.1 Note: All dimensions are typical with tolerances of +/- 0.15 unless otherwise stated. Units: Millimeters (Inches) Note: Device position and scale are only for reference. ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Package Dimensions [2GB – 2 Ranks, 128M x8 DDR2 SDRAMs] (2X) 1. 2.15 11.40 4.20 2.70 Detail A 4.00 +/- 0.10 Note: All dimensions are typical with tolerances of +/- 0.15 unless otherwise stated. Units: Millimeters (Inches) Note: Device position and scale are only for reference. ...
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... NT1GT64UH8G0FS / NT2GT64U8HG0BS 1GB: 128M 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Revision Log Rev Date 0.1 01/2010 Preliminary Edition 1.0 08/2010 Official Release Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd., Kueishan, Taoyuan, 333, Taiwan, R.O.C. Tel: +886-3-328-1688 Please visit our home page for more information: Printed in Taiwan © ...