nt1gt72u8pb0by Nanya Techology, nt1gt72u8pb0by Datasheet

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nt1gt72u8pb0by

Manufacturer Part Number
nt1gt72u8pb0by
Description
240pin Unbuffered Ddr2 Sdram Module With Ecc Based On 64mx8 Ddr2 Sdram B Die
Manufacturer
Nanya Techology
Datasheet
NT512T72U89B0BY / NT1GT72U8PB0BY
512MB: 64M x 72 / 1GB: 128M x 72
Unbuffered DDR2 SDRAM DIMM with ECC
240pin Unbuffered DDR2 SDRAM MODULE with ECC
Based on 64Mx8 DDR2 SDRAM B Die
Features
• Performance:
• JEDEC Standard 240-pin Dual In-Line Memory Module
• 64Mx72, and 128Mx72 DDR2 Unbuffered DIMM based on
• Intended for 266MHz, 333MHz, and 400MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
• SDRAMs have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• Bi-directional data strobe with one clock cycle preamble
• Address and control signals are fully synchronous to positive
• Programmable Operation:
Description
NT512T72U89B0BY and NT1GT72U8PB0BY are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Unbuffered Dual In-Line
Memory Module with ECC (UDIMM ECC), organized as one-rank 64Mx72 and two ranks 128Mx72 high-speed memory array. Modules
use nine 64Mx8 (512MB) and eighteen 64Mx8 DDR2 SDRAMs in BGA package. These DIMMs are manufactured using raw cards
developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between
suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating up to 233 MHz (333MHz, 400MHz) clock speeds and achieves high-speed data
transfer rates of up to 533MHz (667MHz, 800MHz). Prior to any access operation, the device
type must be programmed into the DIMM by address inputs A0-A14 and I/O inputs BA0 and BA1 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.3
03/2007
f
t
f
CK
CK
DQ
clock edge
- Device
64Mx8 DDR2 SDRAM
DD
DIMM
Clock Frequency
Clock Cycle
DQ Burst Frequency
= V
Speed Sort
DDQ
= 1.8Volt ± 0.1
Latency
Latency: 3,4,5 (-37B/-3C/-25C) & 4,5,6 (-25D)
*
(NT5TU64M8BE)
PC2-4200
-37B
3.75
333
667
4
PC2-5300
266
533
-3C
5
3
PC2-6400
-25C
400
800
2.5
5
PC2-6400
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
-25D
400
800
2.5
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 14/10/1 Addressing (row/column/bank) – 512MB
• 14/10/2 Addressing (row/column/bank) – 1GB
• Serial Presence Detect
• Gold contacts
• SDRAMs in 60 ball BGA Package
• RoHS compliance
6
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
MHz
MHz
Unit
ns
latency and burst / length / operation
© NANYA TECHNOLOGY CORP.

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nt1gt72u8pb0by Summary of contents

Page 1

... Latency: 3,4,5 (-37B/-3C/-25C) & 4,5,6 (-25D) Description NT512T72U89B0BY and NT1GT72U8PB0BY are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Unbuffered Dual In-Line Memory Module with ECC (UDIMM ECC), organized as one-rank 64Mx72 and two ranks 128Mx72 high-speed memory array. Modules use nine 64Mx8 (512MB) and eighteen 64Mx8 DDR2 SDRAMs in BGA package. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” ...

Page 2

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Ordering Information Part Number NT512T72U89B0BY-37B 266MHz (3.75ns NT512T72U89B0BY-3C 333MHz (3.0ns NT512T72U89B0BY-25C 400MHz (2.5ns NT512T72U89B0BY-25D 400MHz (2.5ns NT1GT72U8PB0BY-37B 266MHz (3.75ns NT1GT72U8PB0BY-3C 333MHz (3.0ns NT1GT72U8PB0BY-25C 400MHz (2 ...

Page 3

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Pinout Pin Front Pin Front CB0 REF CB1 SS 3 DQ0 DQ1 DQS8 DQS0 48 CB2 CB3 SS 9 DQ2 ...

Page 4

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Input/Output Functional Description Symbol Type Polarity Positive CK0, CK1, CK2 (SSTL) Edge Negative , , (SSTL) Edge Active CKE0, CKE1 (SSTL) High Active , (SSTL) Low Active , , (SSTL) Low V Supply ...

Page 5

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Functional Block Diagram (512MB, 1 Rank, 64Mx8 DDR2 SDRAMs " $% " & $% & " $% & " & " $% & " $% & " & ...

Page 6

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Functional Block Diagram (1GB, 2 Rank, 64Mx8 DDR2 SDRAMs) REV 1.3 03/2007 6 © NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

Page 7

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect – Part (512MB) 64Mx72 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 8

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect -- Part (512MB) 64Mx64 1RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 37 Internal Write to Read Command delay (t ...

Page 9

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect -- Part (512MB) 64Mx64 1RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 63 Checksum for byte 0-62 64-71 Manufacture’s JEDEC ID Code ...

Page 10

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect – Part (1GB) 128Mx72 2 RANKs UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 11

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect -- Part (1GB) 128Mx64 2RANKs UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 37 Internal Write to Read Command delay (t ...

Page 12

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Serial Presence Detect -- Part (1GB) 128Mx64 2RANKs UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 63 Checksum for byte 0-62 64-71 Manufacture’s JEDEC ID Code ...

Page 13

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Environmental Requirements Symbol Operating Temperature (ambient) T OPR Operating Humidity (relative) H OPR Storage Temperature T STG Storage Humidity (without condensation) H STG Barometric pressure (operating & storage 9850ft. Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied ...

Page 14

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC ODT DC Electrical Characteristics Parameter/Condition Rtt effective impedance value for EMRS(A6,A2)=0,1; 75ohm Rtt effective impedance value for EMRS(A6,A2)=1,0; 150ohm Rtt effective impedance value for EMRS(A6,A2)=1,1; 50ohm Deviation of V with respect to VDDQ/2 M Note1: Test condition for Rtt measurements ...

Page 15

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (512MB, 1 Rank, 64Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; address DD0 (MIN) ...

Page 16

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (1GB, 2 Ranks, 64Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; address DD0 (MIN) ...

Page 17

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter DQ output access time from CK DQS output access time from CK/ ...

Page 18

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter Average Periodic Refresh Interval (85º C < 95ºC) CASE t REFI Average Periodic Refresh Interval (0º ...

Page 19

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Package Dimensions (512MB, 1 Rank, 64Mx8 DDR2 SDRAMs) Note: Device position is only for reference. REV 1.3 03/2007 19 © NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

Page 20

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Package Dimensions (1GB, 2 Ranks, 64Mx8 DDR2 SDRAMs) Note: Device position is only for reference. REV 1.3 03/2007 20 © NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

Page 21

... NT512T72U89B0BY / NT1GT72U8PB0BY 512MB: 64M 1GB: 128M x 72 Unbuffered DDR2 SDRAM DIMM with ECC Revision Log Rev Date 1.0 06/2006 Official Release 1.1 08/2006 Update Package Dimensions. 1.2 12/2006 Add DDR2-800 spec. 1.3 03/2007 Modified Ordering Information REV 1.3 03/2007 Modification 21 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

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