nt1gt72u8pb0by Nanya Techology, nt1gt72u8pb0by Datasheet - Page 14

• Manufacturer Part Number: nt1gt72u8pb0by
• Description: 240pin Unbuffered Ddr2 Sdram Module With Ecc Based On 64mx8 Ddr2 Sdram B Die
• Manufacturer: Nanya Techology

NT512T72U89B0BY / NT1GT72U8PB0BY
512MB: 64M x 72 / 1GB: 128M x 72
Unbuffered DDR2 SDRAM DIMM with ECC
ODT DC Electrical Characteristics
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50ohm
Deviation of V
Note1: Test condition for Rtt measurements.
Input AC/DC logic level
REV 1.3
03/2007
Symbol
V
V
V
V
IH (AC)
IH (DC)
IL (DC)
IL (AC)
Input High (Logic1) Voltage
Input Low (Logic0) Voltage
Input High (Logic1) Voltage
Input Low (Logic0) Voltage
M
with respect to VDDQ/2
Parameter/Condition
Parameter
V
V
0.250
0.125
Min.
REF
REF
-0.3
-
DDR2-533
+
+
V
DDQ
V
V
0.250
0.125
Max.
REF
REF
-
Delta VM
+ 0.3
Symbol
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
14
-
-
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
DDR2-667/DDR2-800
V
V
0.200
0.125
Min.
REF
REF
-0.3
-
Min.
+
+
120
60
40
-6
V
DDQ
V
V
0.200
0.125
Max.
REF
REF
-
+ 0.3
Nom.
150
-
-
75
50
Units
V
V
V
V
Max.
180
+6
90
60
© NANYA TECHNOLOGY CORP.
Units
ohm
ohm
ohm
%
Note
1
1
1
1