nt1gt64uh8c0fn Nanya Techology, nt1gt64uh8c0fn Datasheet - Page 15
nt1gt64uh8c0fn
Manufacturer Part Number
nt1gt64uh8c0fn
Description
Based On Ddr2-533/667/800 64mx16 1gb /128mx8 2gb Sdram C-die
Manufacturer
Nanya Techology
Datasheet
1.NT1GT64UH8C0FN.pdf
(20 pages)
Note: Module IDD was calculated from component IDD. It may differ from the actual measurement.
NT1GT64UH8C0FN / NT2GT64U8HC0BN
1GB: 128M x 64 / 2GB: 256M x 64
PC2-4200 / PC2-5300 / PC2-6400
Unbuffered DDR2 SO-DIMM
Operating, Standby, and Refresh Currents
T
REV 1.1
02/2008
Symbol
IDD3PF
IDD3PS
IDD4W
IDD2Q
IDD2P
IDD2N
IDD3N
IDD4R
IDD5B
CASE
IDD0
IDD1
IDD6
IDD7
= 0 ° C ~ 85 °C; V
Operating Current: one bank; active/precharge; t
DQ, DM, and DQS inputs changing twice per clock cycle; address and
control inputs changing once per clock cycle
Operating Current: one bank; active/read/precharge; Burst = 4; t
(MIN)
once per clock cycle
Precharge Power-Down Standby Current: all banks idle; power-down
mode; CKE ≤ V
Precharge quiet standby current
Idle Standby Current: CS ≥ V
(MIN)
Active Power-Down Standby Current: one bank active; power-down
mode; CKE ≤ V
Active Power-Down Standby Current: one bank active; power-down
mode; CKE ≤ V
Active Standby Current: one bank; active/precharge; CS ≥ V
V
twice per clock cycle; address and control inputs changing once per clock
cycle
Operating Current: one bank; Burst = 4; reads; continuous burst; address
and control inputs changing once per clock cycle; DQ and DQS outputs
changing twice per clock cycle; CL = 4; t
Operating Current: one bank; Burst = 4; writes; continuous burst; address
and control inputs changing once per clock cycle; DQ and DQS inputs
changing twice per clock cycle; CL= 4; t
Burst Refresh Current: t
Self-Refresh Current: CKE ≤ 0.2V
Operating Current: four bank; four bank interleaving with BL = 4, address
and control inputs randomly changing; 50% of data changing at every
transfer; t
IH (MIN)
; CL= 4; t
; address and control inputs changing once per clock cycle
; t
RC
RC
= t
= t
CK
DDQ
RAS (MAX)
RC (min)
= t
IL (MAX)
IL (MAX)
IL (MAX)
= V
CK (MIN)
; I
DD
; t
; t
; t
; t
OUT
CK
CK
CK
CK
= 1.8V
; I
RC
Parameter/Condition
OUT
= t
= t
= t
= t
= 0mA.
= t
CK (MIN)
CK (MIN)
CK (MIN)
CK (MIN)
= 0mA; address and control inputs changing
IH (MIN)
RFC (MIN)
0.1V [2GB, 2 Ranks, 128M x 8 DDR2 SDRAMs]
; MRS(12)=0
; MRS(12)=1
; DQ, DM, and DQS inputs changing
; all banks idle; CKE ≥ V
CK
CK
= t
= t
CK (MIN)
CK (MIN)
RC
= t
; I
OUT
RC (MIN)
15
= 0mA
IH (MIN)
; t
IH (MIN)
CK
= t
; t
RC
; CKE ≥
CK
CK (MIN)
= t
= t
RC
CK
;
NANYA reserves the right to change products and specifications without notice.
PC2-4200
(-37B)
1196
1135
1296
1201
2242
1830
141
796
998
415
185
964
158
PC2-5300
(-3C)
1363
1279
1128
1073
1457
1335
2473
2138
141
883
440
187
158
© NANYA TECHNOLOGY CORPORATION
PC2-6400
(-AD)
1538
1436
1265
1192
1627
1479
2576
3636
141
981
476
189
158
PC2-6400
(-AC)
1538
1436
1265
1192
1627
1479
2576
3636
141
981
476
189
158
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA