rt3n66u ISAHAYA ELECTRONICS CORPORRATION, rt3n66u Datasheet
rt3n66u
Related parts for rt3n66u
rt3n66u Summary of contents
Page 1
... PRELIMINARY DESCRIPTION RT3N66U is a composite transistor built with two RT1N430 in USM6F package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ※ MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER ...
Page 2
... =6V,I =-10mA CE E (Tr1,Tr2 common) DC forward gain current - Collector current 1000 V 100 10 0.1 10 100 1.2 1.4 1.6 1.8 2 ISAHAYA ELECTRONICS CORPORATION RT3N66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type Limits Min Typ 100 - - 0.1 3.3 4.7 - 200 = Collector current Ic(mA) Unit ...
Page 3
Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...
Page 4
...