rt3ammam1 ISAHAYA ELECTRONICS CORPORRATION, rt3ammam1 Datasheet

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rt3ammam1

Manufacturer Part Number
rt3ammam1
Description
Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet
DESCRIPTION
FEATURE
APPLICATION
MAXIMUM RATING (Ta=25℃)
PRELIMINARY
RT3AMMAM1 is a composite transistor built with two
ISA1235A chips in SC-88 package.
Silicon pnp epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
For low frequency amplify application
SYMBOL
V
V
V
I
P
T
T
C
CBO
EBO
CEO
C
j
stg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Total,Ta=25℃)
Junction temperature
Storage temperature
PARAMETER
ISAHAYA ELECTRONICS CORPORATION
(The characteristics apply to both Tr1 and Tr2.)
-55~+125
RATING
+125
-200
150
-60
-50
-6
OUTLINE DRAWING
UNIT
mW
mA
V
V
V
Tr1
For Low Frequency Amplify Application
MARKING
2.1
1.25
Tr2
RT3AMMAM1
.
A A
6
Silicon Pnp Epitaxial Type
5
2
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
JEITA:SC-88
Composite Transistor
F
4
3
hFE
rank
Unit:mm

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rt3ammam1 Summary of contents

Page 1

... PRELIMINARY DESCRIPTION RT3AMMAM1 is a composite transistor built with two ISA1235A chips in SC-88 package. FEATURE Silicon pnp epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify application MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER Collector to Base voltage ...

Page 2

... E V =-6V =-6V,I =-1mA =-6V,I =-0.1mA =-100mA,I =-10mA =-6V,I =10mA =-6V,I =0,f=1MH =6V,I =0.3mA,f=100H ,R =10k Ω RT3AMMAM1 Composite Transistor Silicon Pnp Epitaxial Type Limits Unit Min Typ Max - μ -0.1 μ -0.1 150 - 500 - -0 200 - 4 ...

Page 3

... IB=-0.10mA -30 IB=-0.08mA IB=-0.06mA -20 IB=-0.04mA -10 IB=-0.02mA IB -100 -1000 -10 -100 RT3AMMAM1 Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type COMMON EMITTER TRANSFER VCE=-6V -0 -0.0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE[V] GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 400 VCE=-6V 300 200 ...

Page 4

Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...

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