ssf3615 Silikron Semiconductor Co.,LTD., ssf3615 Datasheet

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ssf3615

Manufacturer Part Number
ssf3615
Description
He Ssf3615 Uses Advanced Trench Technology To Provide Excellent Rds On And Low Gate Charge .
Manufacturer
Silikron Semiconductor Co.,LTD.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSF3615
Manufacturer:
SILIKRON
Quantity:
20 000
PACKAGE MARKING AND ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
GENERAL FEATURES
● V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM applications
●Load switch
●Power management
DESCRIPTION
The SSF3615 uses advanced trench
technology to provide excellent R
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Device Marking
R
R
DS
DS(ON)
DS(ON)
SSF3615
=- 30V,I
< 19mΩ @ V
< 12mΩ @ V
D
Parameter
=-10A
GS
GS
=-4.5V
=-10V
SSF3615
Device
Parameter
DS(ON)
Device Package
SOP-8
Symbol
BV
DSS
1
V
Reel Size
Ø330mm
GS
Condition
=0V I
Symbol
I
I
D
T
D
D
=-250μA
(25
(70
J
R
V
V
I
,T
P
DM
θJA
DS
GS
D
Marking and pin Assignment
STG
http://www.silikron.com
)
)
Schematic diagram
Tape width
G
SOP-8 top view
12mm
Min
D
-30
-55 To 150
S
Limit
±25
-30
-80
3.1
40
Typ
-8
-6
SSF3615
Max
2500 units
Quantity
Unit
℃/W
v1.1
W
V
V
A
A
A
Unit
V

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ssf3615 Summary of contents

Page 1

... DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● 30V,I =-10A < 19mΩ =-4.5V DS(ON < 12mΩ =-10V DS(ON) GS ● High Power and current handing capability ● ...

Page 2

... I = d(off =-15V,I =-10A,V =-10V =-10A, dI/dt=100A/µ =0V,I =- http://www.silikron.com SSF3615 -1 μA ±100 nA -1.7 -2 mΩ 9.5 12 mΩ 1200 PF 240 PF 150 8 ...

Page 3

... V V INVERTED INVERTED OUT OUT 10% 10 50% 50% 10% 10% PULSE WIDTH PULSE WIDTH Figure 2:Switching Waveforms T -Junction Temperature(℃) J Figure 4 Drain Current -I - Drain Current (A) D Figure 6 Drain-Source On-Resistance 3 http://www.silikron.com SSF3615 t t off off 90% 90% 10% 10% 90% 90% 50% 50% v1.1 ...

Page 4

... Gate-Source Voltage (V) Figure 7 Transfer Characteristics -Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge ©Silikron Semiconductor CO.,LTD. T -Junction Temperature(℃) J Figure 8 Drain-Source On-Resistance -Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds -Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward 4 http://www.silikron.com SSF3615 v1.1 ...

Page 5

... Figure 14 Normalized Maximum Transient Thermal Impedance ©Silikron Semiconductor CO.,LTD. Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) 5 SSF3615 http://www.silikron.com v1.1 ...

Page 6

... Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 6 http://www.silikron.com SSF3615 v1.1 ...

Page 7

... It is possible that these or contained herein are 7 SSF3615 material damage. Consult with result from using products at should always evaluate and probabilistic failures could give subject to change without notice http://www.silikron.com ...

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