mt3s03at TOSHIBA Semiconductor CORPORATION, mt3s03at Datasheet

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mt3s03at

Manufacturer Part Number
mt3s03at
Description
Toshiba Transistor Silicon Npn Epitaxial Planar Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT3S03AT
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
mt3s03at(TE85L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
VHF~UHF Band Low Noise Amplifier Applications
Absolute Maximum Ratings
Marking
Microwave Characteristics
Low noise figure: NF = 1.4dB (at f = 2 GHz)
High gain: gain = 8dB (at f = 2 GHz)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Transition frequency
Insertion gain
Noise figure
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
(Ta = 25°C)
(Ta = 25°C)
⎪S
⎪S
Symbol
Symbol
MT3S03AT
NF (1)
NF (2)
V
V
21e
21e
V
f
f
T
T
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
(1)
(2)
C
j
2
2
(1)
(2)
V
V
V
V
V
V
CE
CE
CE
CE
CE
CE
−55~125
Rating
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 3 V, I
100
125
10
40
10
5
2
1
C
C
C
C
C
C
Test Condition
= 5 mA
= 10 mA
= 5 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 7 mA, f = 2 GHz
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.0022 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
5
7
6
Typ.
5.5
1.7
1.4
10
7
8
MT3S03AT
2-1B1A
2007-11-01
Max
2.2
3
Unit: mm
GHz
Unit
dB
dB

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mt3s03at Summary of contents

Page 1

... mA GHz (2) V 21e mA GHz GHz NF ( MT3S03AT Unit: mm JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Min Typ. Max Unit ⎯ GHz ⎯ ⎯ ...

Page 2

... Symbol Test Condition = CBO EBO MHz MT3S03AT Min Typ. Max Unit ⎯ ⎯ μA 0.1 ⎯ ⎯ μA 1 ⎯ 80 160 ⎯ (Note) 0.75 1.1 pF 2007-11-01 ...

Page 3

... MT3S03AT 2007-11-01 ...

Page 4

... MT3S03AT 2 ⎪S ⎪ S22 21 Mag. Ang. (°) (dB) −26.75 0.872 22.91 −46.64 0.695 20.93 −58.76 0.548 18.87 −67.42 0.442 17.02 −73.36 0.372 15.43 −78.15 0.320 14.07 −81.90 0.283 12.90 −84.50 0.255 11.88 −86.64 0.233 10.99 −88.82 0.214 10.17 −90.56 0.202 9.42 −91.76 ...

Page 5

... MT3S03AT 2 ⎪S ⎪ S22 21 Mag. Ang. (°) (dB) −52.35 0.622 29.74 −76.84 0.389 25.55 −90.44 0.276 22.49 −101.30 0.213 20.21 −109.99 0.174 18.38 −117.89 0.149 16.85 −124.15 0.130 15.58 −129.15 0.114 14.52 −133.86 0.102 13.57 −138.99 0.092 12.67 −142.41 0.083 11.95 −144.85 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 MT3S03AT 20070701-EN GENERAL 2007-11-01 ...

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