upc2715t

Manufacturer Part Numberupc2715t
Description1.8 Ghz Low Power Consumption Wide Band Amplifier Silicon Bipolar Monolithic Integrated Circuit
ManufacturerRenesas Electronics Corporation.
upc2715t datasheet
 


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LOW POWER CONSUMPTION
FEATURES
• LOW POWER CONSUMPTION:
15 mW (V
= 3.4 V, I
= 4.5 mA)
CC
CC
• HIGH POWER GAIN: 20 dB (UPC2715T)
• WIDE FREQUENCY RESPONSE:
2 GHz (UPC2714T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2714T and UPC2715T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require low
power consumption and wide frequency operation. They are
designed for low cost, low power consumption gain stages in
cellular radios, GPS receivers, and PCN applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
I
Circuit Current
CC
G
Small Signal Gain
S
f
Upper Limit Operating Frequency
U
(The gain at f
is 3 dB down from the gain at 0.1 GHz)
U
G
Gain Flatness, f = 0.1~ 0.6 GHz
S
P
Saturated Output Power
SAT
NF
Noise Figure
RL
Input Return Loss
IN
RL
Output Return Loss
OUT
ISOL
Isolation
G
Gain-Temperature Coefficient
T
R
Thermal Resistance (Junction to Ambient)
TH
SILICON MMIC AMPLIFIER
(T
= 25 C, f = 0.5 GHz, V
= 3.4 V)
A
CC
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
dB/ C
C/W
UPC2714T
UPC2715T
GAIN vs. FREQUENCY
20
UPC2715
15
10
UPC2714
5
0
0
0.5
1.0
1.5
Frequency, f (GHz)
UPC2714T
UPC2715T
T06
T06
MIN
TYP
MAX
MIN
TYP
3.3
4.5
5.7
3.3
8.5
11.5
15.5
16
1.4
1.8
0.9
1.0
-10
-7
-9
5.0
6.5
10
13
12
5
8
5
22
27
28
+0.006
+0.006
200
California Eastern Laboratories
2.0
MAX
4.5
5.7
19
23
1.2
1.0
-6
4.5
6.0
17
8
33
200

upc2715t Summary of contents

  • Page 1

    ... SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2714T and UPC2715T are Silicon Monolithic inte- grated circuits manufactured using the NESAT III process. These devices are suitable for applications which require low power consumption and wide frequency operation. They are designed for low cost, low power consumption gain stages in cellular radios, GPS receivers, and PCN applications ...

  • Page 2

    ... V = 3.06V 1.0 2.0 PARAMETER UNITS MIN Supply Voltage V 3.06 UPC2714T/UPC2715T CIRCUIT CURRENT vs. TEMPERATURE 3. - Temperature UPC2715T GAIN AND NOISE FIGURE vs. FREQUENCY 0.1 0.3 1.0 2.0 Frequency, f (GHz) TYP MAX 3 ...

  • Page 3

    ... UPC2715T INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY 10 0 RLin -10 -20 RLout -30 -40 0.1 0.3 1.0 Frequency, f (GHz) UPC2715T ISOLATION vs. FREQUENCY 0 -10 -20 -30 -40 0.1 0.3 1.0 Frequency, f (GHz) UPC2715T POWER vs. FREQUENCY SAT -10 P 1dB -15 -20 0 0.5 1.0 1.5 Frequency, f (GHz) X: Typical SSB Third Order Intercept Point 2.0 2.0 2.0 ...

  • Page 4

    ... T = 85˚ 25˚ 40˚ 40˚ 85˚C A -20 -30 -50 -40 -30 -10 -20 Input Power, P (dBm) IN UPC2715T OUTPUT POWER vs. INPUT POWER AND VOLTAGE -10 3.06 V -20 -30 -50 -40 -30 -20 -10 Input Power, P (dBm 1000 ...

  • Page 5

    ... UPC2715T FREQUENCY S 11 (GHz) MAG ANG 0.10 0.052 33.7 0.20 0.087 21.3 0.30 0.121 9.5 0.40 0.141 -2.1 0.50 0.159 -12.4 0.60 0.175 -27.8 0.70 0.181 -40.7 0.80 0.184 -52.3 0.90 0.187 -66.1 1.00 0.187 -78.4 1.10 0.186 -89.3 1.20 0.182 -101.5 1.30 0.178 -113.8 1 ...

  • Page 6

    ... GND 5. GND RECOMMENDED P.C.B. LAYOUT -0.05 6 0.3 +0.10 0.13±0.1 QTY 3K/Reel 3K/Reel RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS (Top View) (Bottom View Note: Package Markings: C1K - UPC2714T C1L - UPC2715T (Units in mm) 3. 1.0 1.0 MIN MIN PRINTED IN USA ON RECYCLED PAPER -11/ 0.95 0.5 MIN ...