upc2715t Renesas Electronics Corporation., upc2715t Datasheet

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upc2715t

Manufacturer Part Number
upc2715t
Description
1.8 Ghz Low Power Consumption Wide Band Amplifier Silicon Bipolar Monolithic Integrated Circuit
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upc2715t-E3
Manufacturer:
NEC
Quantity:
9 500
DESCRIPTION
The UPC2714T and UPC2715T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require low
power consumption and wide frequency operation. They are
designed for low cost, low power consumption gain stages in
cellular radios, GPS receivers, and PCN applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
FEATURES
• LOW POWER CONSUMPTION:
• HIGH POWER GAIN: 20 dB (UPC2715T)
• WIDE FREQUENCY RESPONSE:
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
ELECTRICAL CHARACTERISTICS
SYMBOLS
15 mW (V
2 GHz (UPC2714T)
CHANGE OVER TEMPERATURE
RL
ISOL
P
RL
R
I
G
NF
CC
f
SAT
G
G
U
OUT
TH
S
IN
S
T
CC
Circuit Current
Upper Limit Operating Frequency
(The gain at f
Gain Flatness, f = 0.1~ 0.6 GHz
Saturated Output Power
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
Small Signal Gain
= 3.4 V, I
PARAMETERS AND CONDITIONS
U
CC
PACKAGE OUTLINE
is 3 dB down from the gain at 0.1 GHz)
= 4.5 mA)
PART NUMBER
LOW POWER CONSUMPTION
SILICON MMIC AMPLIFIER
(T
A
= 25 C, f = 0.5 GHz, V
UNITS
dB/ C
GHz
dBm
C/W
mA
dB
dB
dB
dB
dB
dB
CC
= 3.4 V)
MIN
-10
3.3
8.5
1.4
10
22
15
5
20
10
5
0
California Eastern Laboratories
0
UPC2714T
+0.006
TYP
11.5
T06
4.5
1.8
5.0
13
27
1.0
-7
8
GAIN vs. FREQUENCY
0.5
Frequency, f (GHz)
MAX
15.5
200
5.7
6.5
UPC2714
UPC2715
1.0
UPC2714T
UPC2715T
MIN
3.3
0.9
16
12
28
-9
5
1.5
UPC2715T
+0.006
TYP
T06
4.5
1.2
4.5
19
17
33
-6
1.0
8
2.0
MAX
200
5.7
6.0
23

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upc2715t Summary of contents

Page 1

... SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2714T and UPC2715T are Silicon Monolithic inte- grated circuits manufactured using the NESAT III process. These devices are suitable for applications which require low power consumption and wide frequency operation. They are designed for low cost, low power consumption gain stages in cellular radios, GPS receivers, and PCN applications ...

Page 2

... V = 3.06V 1.0 2.0 PARAMETER UNITS MIN Supply Voltage V 3.06 UPC2714T/UPC2715T CIRCUIT CURRENT vs. TEMPERATURE 3. - Temperature UPC2715T GAIN AND NOISE FIGURE vs. FREQUENCY 0.1 0.3 1.0 2.0 Frequency, f (GHz) TYP MAX 3 ...

Page 3

... UPC2715T INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY 10 0 RLin -10 -20 RLout -30 -40 0.1 0.3 1.0 Frequency, f (GHz) UPC2715T ISOLATION vs. FREQUENCY 0 -10 -20 -30 -40 0.1 0.3 1.0 Frequency, f (GHz) UPC2715T POWER vs. FREQUENCY SAT -10 P 1dB -15 -20 0 0.5 1.0 1.5 Frequency, f (GHz) X: Typical SSB Third Order Intercept Point 2.0 2.0 2.0 ...

Page 4

... T = 85˚ 25˚ 40˚ 40˚ 85˚C A -20 -30 -50 -40 -30 -10 -20 Input Power, P (dBm) IN UPC2715T OUTPUT POWER vs. INPUT POWER AND VOLTAGE -10 3.06 V -20 -30 -50 -40 -30 -20 -10 Input Power, P (dBm 1000 ...

Page 5

... UPC2715T FREQUENCY S 11 (GHz) MAG ANG 0.10 0.052 33.7 0.20 0.087 21.3 0.30 0.121 9.5 0.40 0.141 -2.1 0.50 0.159 -12.4 0.60 0.175 -27.8 0.70 0.181 -40.7 0.80 0.184 -52.3 0.90 0.187 -66.1 1.00 0.187 -78.4 1.10 0.186 -89.3 1.20 0.182 -101.5 1.30 0.178 -113.8 1 ...

Page 6

... GND 5. GND RECOMMENDED P.C.B. LAYOUT -0.05 6 0.3 +0.10 0.13±0.1 QTY 3K/Reel 3K/Reel RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS (Top View) (Bottom View Note: Package Markings: C1K - UPC2714T C1L - UPC2715T (Units in mm) 3. 1.0 1.0 MIN MIN PRINTED IN USA ON RECYCLED PAPER -11/ 0.95 0.5 MIN ...

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