upc8232t5n Renesas Electronics Corporation., upc8232t5n Datasheet
upc8232t5n
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upc8232t5n Summary of contents
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SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION μ The PC8232T5N is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC ...
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PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Power-Saving Voltage V Total Power Dissipation P Operating Ambient Temperature T Storage Temperature ...
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ELECTRICAL CHARACTERISTICS (T = +25° 3 575 MHz, unless otherwise specified Parameter Symbol Circuit Current I Power Gain G Noise Figure NF Input 3rd Order Intercept Point IIP ...
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TYPICAL CHARACTERISTICS (T A POWER GAIN vs. FREQUENCY –40° +25°C 14 +85° 500 1 525 1 550 1 600 1 575 Frequency f (MHz) in POWER GAIN vs. ...
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OUTPUT POWER vs. INPUT POWER 575 MHz in 0 –10 – –21.9 dBm in (1dB) –30 –50 –40 –30 –20 Input Power P (dBm) in GAIN ...
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CIRCUIT CURRENT vs. SUPPLY VOLTAGE +85° +25°C 2 –40° 2.0 2.5 3.0 Supply Voltage V (V) CC CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE ...
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S-PARAMETERS (T = +25° –FREQUENCY 11 1 START 100.000 MHz STOP 4 100.000 MHz INPUT RETURN LOSS vs. FREQUENCY 0 –5 –10 –15 –20 –25 – 000 1 500 2 000 3 000 500 ...
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PACKAGE DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) (Top View) 1.5±0.1 8 (Side View) +0.03 0.37 0.2±0.1 –0.05 Data Sheet PU10672EJ02V0DS μ PC8232T5N (Bottom View) 0.3±0.07 0.7±0.1 ...
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NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...
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The information in this document is current as of February, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...