upc3226tb

Manufacturer Part Numberupc3226tb
Description5 V, Silicon Germanium Mmic Medium Output Power Amplifier
ManufacturerRenesas Electronics Corporation.
upc3226tb datasheet
 


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5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The PC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
This IC is manufactured using our 50 GHz f
FEATURES
• Low current
: I
• Medium output power
: P
: P
• High linearity
: P
: P
• Power gain
: G
: G
• Noise Figure
: NF = 5.3 dB TYP. @ f = 1.0 GHz
: NF = 4.9 dB TYP. @ f = 2.2 GHz
• Supply voltage
: V
• Port impedance
: input/output 50
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
Order Number
PC3226TB-E3
PC3226TB-E3-A 6-pin super minimold
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10558EJ01V0DS (1st edition)
Date Published May 2005 CP(K)
Printed in Japan
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
UHS2 (Ultra High Speed Process) SiGe bipolar process.
max
= 15.5 mA TYP. @ V
= 5.0 V
CC
CC
= +13.0 dBm TYP. @ f = 1.0 GHz
O (sat)
= +9.0 dBm TYP. @ f = 2.2 GHz
O (sat)
= +7.5 dBm TYP. @ f = 1.0 GHz
O (1dB)
= +5.7 dBm TYP. @ f = 2.2 GHz
O (1dB)
= 25.0 dB TYP. @ f = 1.0 GHz
P
= 26.0 dB TYP. @ f = 2.2 GHz
P
= 4.5 to 5.5 V
CC
Package
Marking
C3N
Embossed tape 8 mm wide.
Note
(Pb-Free)
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
PC3226TB
PC3226TB
Supplying Form
NEC Compound Semiconductor Devices, Ltd. 2005

upc3226tb Summary of contents

  • Page 1

    V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz f FEATURES • Low current ...

  • Page 2

    PIN CONNECTIONS (Top View) (Top View PRODUCT LINE- V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (T = +25° GHz out f ...

  • Page 3

    ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 RECOMMENDED OPERATING RANGE Parameter Symbol Supply Voltage V Operating ...

  • Page 4

    ELECTRICAL CHARACTERISTICS (T Parameter Symbol Circuit Current I Power Gain 1 G Power Gain 2 G Power Gain 3 G Power Gain 4 G Power Gain 5 G Power Gain 6 G Saturated Output Power (sat) Saturated ...

  • Page 5

    TEST CIRCUIT 50 IN 100 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 Chip Capacitor C3 Chip ...

  • Page 6

    ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN C1 COMPONENT LIST Notes Value 1. C1, C2 100 000 100 0.4 mm ...

  • Page 7

    TYPICAL CHARACTERISTICS ( CIRCUIT CURRENT vs. SUPPLY VOLTAGE 25 No Input Signal + Supply Voltage V (V) CC POWER GAIN vs. FREQUENCY ...

  • Page 8

    OUTPUT POWER vs. INPUT POWER + 1.0 GHz + 5 + 4.5 V –5 –10 –15 –20 –40 –30 –20 –10 0 Input Power P (dBm) in NOISE FIGURE vs. ...

  • Page 9

    OUTPUT POWER, IM vs. INPUT POWER 3 + 000 MHz 1 P out 001 MHz + – –20 –30 –40 –50 –60 –70 –80 –90 –40 –30 –20 –10 Input ...

  • Page 10

    S-PARAMETERS ( FREQUENCY 11 S FREQUENCY 5 dBm) out in START : STOP : 5 100.000 000 MHz 000 ...

  • Page 11

    PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10558EJ01V0DS PC3226TB 11 ...

  • Page 12

    NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

  • Page 13

    When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. ...

  • Page 14

    For further information, please contact NEC Compound Semiconductor Devices, Ltd. E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office ...