upc3237tk Renesas Electronics Corporation., upc3237tk Datasheet

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upc3237tk

Manufacturer Part Number
upc3237tk
Description
Low Noise Wide Band Silicon Germanium Mmic Amplifier For Mobile Communications
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upc3237tk-E2-A
Manufacturer:
RENESAS
Quantity:
16 444
Document No. PU10675EJ01V0DS (1st edition)
Date Published July 2007 NS
Printed in Japan
DESCRIPTION
mobile digital TV etc. This device exhibits low noise figure and high power gain characteristics.
FEATURES
• Supply voltage
• Low current consumption
• Low Noise
• Power gain
• High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)
APPLICATIONS
• Low noise amplifier for the mobile digital TV etc.
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
μ
PC3237TK-E2
The
This package is 6-pin lead-less minimold, suitable for surface mount.
This IC is manufactured using our 50 GHz f
Remark
Part Number
μ
PC3237TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for the
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
LOW NOISE WIDE BAND SILICON GERMANIUM MMIC
μ
PC3237TK-E2-A 6-pin lead-less minimold
Order Number
AMPLIFIER FOR MOBILE COMMUNICATIONS
: V
: I
: NF = 1.4 dB TYP. @ f = 470 MHz
: NF = 1.5 dB TYP. @ f = 770 MHz
: G
: G
(1511 PKG) (Pb-Free)
CC
CC
P
P
= 5 mA TYP. @ V
= 15.3 dB TYP. @ f = 470 MHz
= 13.5 dB TYP. @ f = 770 MHz
= 2.4 to 3.3 V (2.8 V TYP.)
BIPOLAR ANALOG INTEGRATED CIRCUIT
Package
μ
max
PC3237TK
DATA SHEET
UHS2 (Ultra High Speed Process) SiGe bipolar process.
CC
= 2.8 V
Marking
6N
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
μ
Supplying Form
PC3237TK
2007

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