upc3241tb

Manufacturer Part Numberupc3241tb
Description3.3 V, Silicon Mmic Medium Output Power Amplifier
ManufacturerRenesas Electronics Corporation.
upc3241tb datasheet
 


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DESCRIPTION
μ
The
PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB.
This device exhibits low noise figure and high power gain characteristics.
This IC is manufactured using our UHS0 (Ultra High Speed Process) bipolar process.
FEATURES
• Low current
: I
• Power gain
: G
: G
• Gain flatness
:
• Noise figure
: NF = 4.0 dB TYP. @ f = 1.0 GHz
: NF = 4.3 dB TYP. @ f = 2.2 GHz
• High linearity
: P
: P
• Supply voltage
: V
: input/output 50 Ω
• Port impedance
APPLICATIONS
• IF amplifiers in DBS LNB, other L-band amplifiers, etc.
ORDERING INFORMATION
Part Number
Order Number
μ
μ
PC3241TB-E3
PC3241TB-E3-A 6-pin super minimold
Remark
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10774EJ01V0DS (1st edition)
Date Published June 2009 NS
Printed in Japan
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
3.3 V, SILICON MMIC MEDIUM
OUTPUT POWER AMPLIFIER
= 19.8 mA TYP.
CC
= 23.5 dB TYP. @ f = 1.0 GHz
P
= 24.0 dB TYP. @ f = 2.2 GHz
P
Δ
G
= 0.7 dB TYP. @ f = 1.0 to 2.2 GHz
P
= +7.5 dBm TYP. @ f = 1.0 GHz
O (1dB)
= +6.0 dBm TYP. @ f = 2.2 GHz
O (1dB)
= 3.0 to 3.6 V
CC
Package
Marking
• Embossed tape 8 mm wide
C3Y
• Pin 1, 2, 3 face the perforation side of the tape
(Pb-Free)
• Qty 3 kpcs/reel
μ
PC3241TB
μ
PC3241TB
Supplying Form
2009

upc3241tb Summary of contents

  • Page 1

    DESCRIPTION μ The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics. This IC is manufactured using our UHS0 (Ultra High Speed Process) bipolar ...

  • Page 2

    PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View PRODUCT LINE- 3.3 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (T = +25° ...

  • Page 3

    ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED ...

  • Page 4

    ELECTRICAL CHARACTERISTICS (T specified) Parameter Symbol Circuit Current I Power Gain 1 G Power Gain 2 G Power Gain 3 G Power Gain 4 G Gain 1 dB Compression Output Power dB) Gain 1 dB Compression ...

  • Page 5

    TEST CIRCUIT C1 100 pF IN Microstrip Line (50 Ω) The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Note L1 ...

  • Page 6

    ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD φ 0.6 Top View → Mounting direction COMPONENT LIST Type L1 Chip Inductor C1, C2 Chip Capacitor C3, C5 Chip Capacitor C4 Feed-through Capacitor 6 0 C4: ...

  • Page 7

    TYPICAL CHARACTERISTICS (T = +25° CIRCUIT CURRENT vs. SUPPLY VOLTAGE 30 No Input Signal +85° +25°C 5 –40° 0.5 1.0 1.5 2.0 2.5 3.0 Supply Voltage V (V) CC ...

  • Page 8

    POWER GAIN vs. FREQUENCY –30 dBm 3 –40° +85° +25° 0.5 1.0 1.5 2.0 2.5 ...

  • Page 9

    OUTPUT POWER vs. INPUT POWER 3 –40° –5 –10 –15 – +25°C, +85°C A – 1.0 GHz –30 –50 –45 –40 –35 –30 –25 –20 –15 –10 –5 ...

  • Page 10

    OUTPUT POWER, IM vs. INPUT POWER +17.5 dBm OIP out 0 –10 – –30 –40 –50 = −5.7 dBm IIP 3 – – 000 MHz –80 ...

  • Page 11

    OUTPUT POWER, IM vs. INPUT POWER +19.4 dBm OIP out 0 –10 – –30 –40 –50 = −4.5 dBm IIP 3 – –40°C – 000 ...

  • Page 12

    OUTPUT POWER, IM vs. INPUT POWER out 0 –10 –20 –30 IM –40 –50 V – 000 MHz – 001 MHz –80 –45 –40 –35 –30 –25 –20 –15 ...

  • Page 13

    OUTPUT POWER, IM vs. INPUT POWER out 0 –10 –20 – –40 – –40°C – 000 MHz – 001 MHz –80 –45 –40 –35 –30 ...

  • Page 14

    OUTPUT POWER, 2f vs. INPUT POWER –10 P out –20 –30 –40 – –60 – 3 – 000 MHz –90 –40 –30 –20 Input Power P (dBm) ...

  • Page 15

    S-PARAMETERS (T = +25° −FREQUENCY S 11 START : 100 MHz −FREQUENCY S 22 START : 100 MHz Remarks 1. Measured on the test circuit of evaluation board. 2. The graphs indicate nominal characteristics. = −30 dBm) ...

  • Page 16

    S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and ...

  • Page 17

    PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10774EJ01V0DS μ PC3241TB 17 ...

  • Page 18

    NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

  • Page 19

    The information in this document is current as of June, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of ...