lmx2525 National Semiconductor Corporation, lmx2525 Datasheet - Page 4

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lmx2525

Manufacturer Part Number
lmx2525
Description
Pllatinum Dual Frequency Synthesizer System With Integrated Vcos
Manufacturer
National Semiconductor Corporation
Datasheet
www.national.com
Symbol
I
I
I
I
REFERENCE OSCILLATOR PARAMETERS
f
V
RF1 VCO FOR PDC1500
f
P
CC
CC
CC
PD
OSCin
RF1out
OSCin
RF1out
Absolute Maximum Ratings
4)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
for T
wise noted.)
Parameter
Supply Voltage
Voltage on any pin
to GND
Storage Temperature Range T
PARAMETERS
+ I
+ I
DD
DD
A
= 25 ˚C; Limits in boldface type apply over the operating temperature range from -20 ˚C ≤ T
Parameter
Supply Current (Note 5)
Supply Current (Note 6)
Power Down Current
Reference Oscillator Input Frequency
(Note 7)
Reference Oscillator Input Sensitivity
Frequency Range (Note 8)
Output Power
Lock Time
RMS Phase Error
Symbol
V
V
CC
I
STG
, V
DD
Ratings
-0.5 to 3.6
-0.3 to V
-0.3 to V
-65 to 150
(V
IN
(Notes 2, 3,
= 2.8 V, refer to Typical Application Circuit; Limits in standard typeface are
Condition
OB_CRL [1:0] = 10
OB_CRL [1:0] = 00
OB_CRL [1:0] = 10
OB_CRL [1:0] = 00
CE = LOW or
RF_PD = 1
Supports 12.6, 14.4, 25.2
and 26.0 MHz.
RF1 VCO for PDC1500
OB_CRL [1:0] = 11
OB_CRL [1:0] = 10
OB_CRL [1:0] = 01
OB_CRL [1:0] = 00
Full frequency span within
each band in High Speed
Mode (HS = 1).
Between bands High Speed
Mode (HS = 1).
Full frequency span within
each band in Normal Mode
(HS = 0).
(Note 11)
Between bands in Normal
Mode (HS = 0).
CC
DD
+ 0.3
+ 0.3
Units
˚C
V
V
V
4
Recommended Operating
Conditions
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, refer to the Electrical Characteristics section. The guaranteed specifi-
cations apply only for the conditions listed.
Note 3: This device is a high performance RF integrated circuit with an ESD
rating
should be done at ESD protected workstations.
Note 4: GND = 0 V.
Parameter
Ambient Temperature
Supply Voltage (to GND) V
<
2 kV and is ESD sensitive. Handling and assembly of this device
1270.22
12.6
Min
-10
-13
-5
-7
Symbol
T
A
CC
10.6
10.0
15.0
14.2
14.4
Typ
0.5
-10
1.3
, V
-2
-4
-7
A
DD
≤ 75 ˚C unless other-
Min Typ Max Unit
-30
2.5
(Note 10)
(Note 10)
(Note 9)
(Note 9)
(Note 9)
(Note 9)
1394.95
Max
12.0
12.3
11.5
11.8
16.5
16.8
15.6
15.9
26.0
V
300
300
500
375
500
400
20
-1
-4
-7
1
25
CC
3.3
85
degrees
Units
MHz
Vp-p
MHz
dBm
dBm
dBm
dBm
mA
mA
mA
mA
µA
µs
µs
µs
µs
µs
µs
˚C
V

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