hi1109 Hi-Sincerity Microelectronics Corp., hi1109 Datasheet

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hi1109

Manufacturer Part Number
hi1109
Description
Pnp Epitaxial Planar Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet
HI1109
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Absolute Maximum Ratings
Characteristics
Classification Of hFE1
Low frequency high voltage amplifier
Complementary pair with HI1609
Maximum Temperatures
Storage Temperature ............................................................................................. -55~+150 C
Junction Temperature .................................................................................................... +150 C
Maximum Power Dissipation
Total Power Dissipation (Ta=25 C) ................................................................................. 1.25 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -160 V
BVCEO Collector to Emitter Voltage................................................................................ -160 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ..................................................................................................... -100 mA
*VCE(sat)
BVCBO
BVCEO
BVEBO
Symbol
Range
*hFE1
*hFE2
ICBO
Rank
VBE
Cob
fT
-160
-160
Min.
60-120
60
30
-5
(Ta=25 C)
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
B
Typ.
140
5.5
-
-
-
-
-
-
-
-
100-200
C
(Ta=25 C)
Max.
-1.5
320
-10
-2
-
-
-
-
-
-
160-320
D
MHz
Unit
uA
pF
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-140V, IE=0
IC=-30mA, IB=-3mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCB=-10V, f=-1MHz
Test Conditions
Spec. No. : HE9019-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HSMC Product Specification

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hi1109 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HI1109 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency high voltage amplifier Complementary pair with HI1609 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................. -55~+150 C Junction Temperature .................................................................................................... +150 C Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ................................................................................. 1.25 W Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................... -160 V BVCEO Collector to Emitter Voltage ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 V 100 10 0.1 1 Collector Current (mA) On Voltage & Collector Current 10000 1000 BE(on) 100 0.1 1 Collector Current (mA) Cutoff Frequency & Collector ...

Page 3

... HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 Factory ...

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