hi112 Hi-Sincerity Microelectronics Corp., hi112 Datasheet

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hi112

Manufacturer Part Number
hi112
Description
Npn Epitaxial Planar Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet
HI112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI112 is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings
Electrical Characteristics
HI112
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (T
Storage Temperature ........................................................................................................................... -55 ~ +150 C
Junction Temperature ..................................................................................................................... 150 C Maximum
Total Power Dissipation (T
V
V
V
I
C
CBO
CEO
EBO
Collector Current ............................................................................................................................................... 4 A
*V
*V
Symbol
*V
Emitter to Base Voltage ................................................................................................................................ 5 V
*V
Collector to Base Voltage ......................................................................................................................... 100 V
Collector to Emitter Voltage ...................................................................................................................... 100 V
BV
BV
*h
*h
*h
Cob
I
I
I
CE(sat)1
CE(sat)2
CBO
CEO
EBO
BE(sat)
BE(on)
FE1
FE2
FE3
CBO
CEO
HI-SINCERITY
MICROELECTRONICS CORP.
Min.
100
100
500
200
1
-
-
-
-
-
-
-
-
C
=25 C) .................................................................................................................... 25 W
Typ.
A
=25 C)
-
-
-
-
-
-
-
-
-
-
-
-
-
(T
A
=25 C)
(T
A
=25 C)
Max.
100
2.8
10
20
12
2
2
3
4
-
-
-
-
Unit
mA
uA
uA
pF
V
V
V
V
V
V
K
I
I
V
V
V
I
I
I
I
I
I
I
V
C
C
C
C
C
C
C
C
C
CB
CE
EB
CB
=1mA
=30mA
=2A, I
=4A, I
=2A, V
=4A, I
=0.5A, V
=2A, V
=4A, V
=80V
=50V
=5V
=10V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
B
B
B
=8mA
=40mA
CE
=80mA
CE
CE
CE
=4V
=3V
=3V
=3V
Test Conditions
Spec. No. : HE9033
Issued Date : 1998.07.01
Revised Date : 2005.12.20
Page No. : 1/5
HSMC Product Specification
TO-251

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hi112 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HI112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI112 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ..................................................................................................................... 150 C Maximum Maximum Power Dissipation Total Power Dissipation (T =25 C) .................................................................................................................... 25 W ...

Page 2

... Saturation Voltage & Collector Current 10000 1000 o 125 C 100 100 1000 Collector Current I Saturation Voltage & Collector Current 10000 1000 o 125 C 100 100 1000 Collector Current I HI112 10000 1000 100 10 hFE @ V =4V CE 1000 10000 (mA) C 10000 1000 CE(sat =100I B ...

Page 3

... HI-SINCERITY MICROELECTRONICS CORP. ON Voltage & Collcetor Current 10000 1000 o 125 C 100 100 1000 Collector Current I Capacitance & Reverse-Biased Voltage 1000 100 10 0.1 1 Reverse-Biased Voltage (V) HI112 BE(ON =3V 0.1 10000 (mA) C 100000 10000 1000 100 Cob 10 100 Spec. No. : HE9033 Issued Date : 1998.07.01 Revised Date : 2005 ...

Page 4

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HI112 Marking Free Mark a1 Pb-Free: " ...

Page 5

... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HI112 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...

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