HSC2625 Hi-Sincerity Microelectronics Corp., HSC2625 Datasheet

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HSC2625

Manufacturer Part Number
HSC2625
Description
Npn Epitaxial Planar Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet
HSC2625
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC2625 is designed for triple diffused planer type high voltage,
high speed switching applications.
Absolute Maximum Ratings
Characteristics
HSC2625
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 C
Junction Temperature.................................................................................... +150 C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25 C) .................................................................................... 80 W
Maximum Voltages and Currents
VCBO Collector to Base Voltage ....................................................................................... 450 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 7 V
IC Collector Current ............................................................................................................ 10 A
IB Base Current ..................................................................................................................... 3 A
*VCE(sat)
*VBE(sat)
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
ICBO
IEBO
Min.
450
400
10
(Ta=25 C)
HI-SINCERITY
MICROELECTRONICS CORP.
7
6
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
(Ta=25 C)
Max.
100
1.2
1.5
30
1
-
-
-
-
Unit
mA
uA
V
V
V
V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
IC=1mA
IC=10mA
IE=100uA
VCB=450V
VEB=7V
IC=4A, IB=800mA
IC=4A, IB=800mA
IC=0.5A, VCE=5V
IC=4A, VCE=5V
Test Conditions
Spec. No. : HR200201
Issued Date : 1996.03.14
Revised Date : 2002.08.13
Page No. : 1/2
HSMC Product Specification
TO-3P

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HSC2625 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HSC2625 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2625 is designed for triple diffused planer type high voltage, high speed switching applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 C Junction Temperature.................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25 C) .................................................................................... 80 W Maximum Voltages and Currents VCBO Collector to Base Voltage ...

Page 2

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSC2625 ...

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