HSC3953 Hi-Sincerity Microelectronics Corp., HSC3953 Datasheet

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HSC3953

Manufacturer Part Number
HSC3953
Description
Npn Epitaxial Planar Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet

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HSC3953
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High–definition CRT display video output, wide-band amplifier.
Features
Absolute Maximum Ratings
Electrical Characteristics
Classification Of hFE1
High fT: 500MHz
High Breakdown Voltage: BVCEO=120Vmin
Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25 C)................................................................................... 1.3 W
Total Power Dissipation (Tc=25 C) ...................................................................................... 8 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 120 V
BVCEO Collector to Emitter Voltage................................................................................. 120 V
BVEBO Emitter to Base Voltage ........................................................................................... 3 V
IC Collector Current ....................................................................................................... 200 mA
Icp Peak Collector Current............................................................................................. 400 mA
*VCE(sat)
*VBE(sat)
BVCBO
BVCEO
BVEBO
Symbol
Range
*hFE1
*hFE2
ICBO
IEBO
Rank
fT
Min.
60-120
120
120
40
60
3
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
D
Typ.
400
-
-
-
-
-
-
-
-
-
100-200
(Ta=25 C)
E
(Ta=25 C)
Max.
320
0.1
0.1
1
1
-
-
-
-
-
160-320
F
MHz
Unit
uA
uA
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=120V, IE=0
VEB=2V
IC=30mA, IB=3mA
IC=30mA, IB=3mA
IC=10mA, VCE=10V
IC=100mA, VCE=10V
IC=50mA , VCE=10V
Test Conditions
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 1/3
HSMC Product Specification

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HSC3953 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High–definition CRT display video output, wide-band amplifier. Features High fT: 500MHz High Breakdown Voltage: BVCEO=120Vmin Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 V = 100 10 0 Collector Current (mA) Saturation Voltage & Collector Current 1000 V BE(sat) 100 0 Collector Current (mA) Safe Operating ...

Page 3

... HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 Factory ...

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