HSC2682 Hi-Sincerity Microelectronics Corp., HSC2682 Datasheet

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HSC2682

Manufacturer Part Number
HSC2682
Description
Npn Epitaxial Planar Transistor
Manufacturer
Hi-Sincerity Microelectronics Corp.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
HSC2682-O
Manufacturer:
华昕
Quantity:
20 000
HSC2682
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Audio frequency power amplifier, high frequency power amplifier.
Absolute Maximum Ratings
Electrical Characteristics
Classification Of hFE2
HSC2682
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents
Storage Temperature ........................................................................................................................... -50 ~ +150 C
Junction Temperature ................................................................................................................... +150 C Maximum
Total Power Dissipation (T
Total Power Dissipation (T
BV
BV
BV
I
C
Collector Current ........................................................................................................................................ 100 mA
CBO
CEO
EBO
Symbol
*V
*V
Range
BV
BV
BV
Rank
*h
*h
Cob
I
I
CBO
EBO
CE(sat)
BE(sat)
f
Emitter to Base Voltage.............................................................................................................................. 5 V
Collector to Base Voltage....................................................................................................................... 180 V
Collector to Emitter Voltage.................................................................................................................... 180 V
FE1
FE2
CBO
CEO
T
EBO
Min.
180
180
100
90
5
HI-SINCERITY
MICROELECTRONICS CORP.
-
-
-
-
-
-
100-200
A
C
=25 C) ................................................................................................................... 1.2 W
=25 C) ...................................................................................................................... 8 W
O
Typ.
120
200
200
0.8
-
-
-
-
-
-
-
(T
A
=25 C)
(T
A
=25 C)
Max.
500
320
1.5
1
1
5
-
-
-
-
-
160-320
Y
MHz
Unit
mV
uA
uA
pF
V
V
V
V
I
I
I
V
V
I
I
I
I
I
V
C
C
E
C
C
C
C
C
=10uA
CB
EB
CB
=1mA
=10mA
=50mA, I
=50mA, I
=1mA, V
=10mA, V
=20mA, V
=3V
=180V
=10V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
CE
B
B
CE
CE
=5mA
=5mA
=5V
=5V
=10V
Test Conditions
Spec. No. : HE6626
Issued Date : 1994.12.07
Revised Date : 2005.08.18
Page No. : 1/4
HSMC Product Specification
TO-126ML

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HSC2682 Summary of contents

Page 1

... Symbol Min. BV 180 CBO BV 180 CEO BV 5 EBO I - CBO I - EBO *V - CE(sat BE(sat FE1 *h 100 FE2 Cob - Classification Of hFE2 Rank O Range 100-200 HSC2682 ( Typ. Max. Unit - - 120 500 mV 0.8 1 200 320 200 - MHz - ...

Page 2

... 0.01 0.1 1 Collector Current (mA) Capacitance & Reverse-Biased Voltage 10 1 0.1 1 Reverse-Biased Voltage (V) Safe Operating Area 10000 1000 100 Forward Voltage (V) HSC2682 =5V CE 0.1 0.01 10 100 1000 Cob 10 100 =100 100 1000 Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2005 ...

Page 3

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSC2682 Marking ...

Page 4

... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HSC2682 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...

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