BU2520AW

Manufacturer Part NumberBU2520AW
DescriptionSilicon Diffused Power Transistor
ManufacturerPhilips Semiconductors (Acquired by NXP)
BU2520AW datasheet
 
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Philips Semiconductors
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
P
Total power dissipation
tot
V
Collector-emitter saturation voltage
CEsat
I
Collector saturation current
Csat
t
Fall time
f
PINNING - SOT429
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
I
Base current (DC)
B
I
Base current peak value
BM
-I
Reverse base current
B(AV)
-I
Reverse base current peak value
BM
P
Total power dissipation
tot
T
Storage temperature
stg
T
Junction temperature
j
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
Junction to mounting base
th j-mb
R
Junction to ambient
th j-a
1 Turn-off current.
September 1997
CONDITIONS
V
= 0 V
BE
T
25 ˚C
mb
I
= 6.0 A; I
= 1.2 A
C
B
I
= 6.0 A; I
= 0.85 A
Csat
B(end)
PIN CONFIGURATION
2
1
3
CONDITIONS
V
= 0 V
BE
average over any 20 ms period
1
T
25 ˚C
mb
CONDITIONS
-
in free air
1
Product specification
BU2520AW
TYP.
MAX.
UNIT
-
1500
V
-
800
V
-
10
A
-
25
A
-
125
W
-
5.0
V
6
-
A
0.2
0.35
s
SYMBOL
c
b
e
MIN.
MAX.
UNIT
-
1500
V
-
800
V
-
10
A
-
25
A
-
6
A
-
9
A
-
150
mA
-
6
A
-
125
W
-65
150
˚C
-
150
˚C
TYP.
MAX.
UNIT
-
1.0
K/W
45
-
K/W
Rev 1.100

BU2520AW Summary of contents

  • Page 1

    ... ˚ 0.85 A Csat B(end) PIN CONFIGURATION CONDITIONS average over any 20 ms period ˚C mb CONDITIONS - in free air 1 Product specification BU2520AW TYP. MAX. UNIT - 1500 V - 800 125 0.2 0.35 s SYMBOL MIN. ...

  • Page 2

    ... MHz 6 330 H; C Csat 0. 3.45 H; B(end (-dI / 650 H; C Csat 1 5 B(end) B (-dI / Product specification BU2520AW MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13 800 - - 5 1 ...

  • Page 3

    ... VCE sust. Fig.4. Switching times waveforms (32 kHz). CEO min VCEOsust sust. CEO ICsat t IBend t IBend -VBB t Fig.6. Switching times test circuit (BU2520A). 3 Product specification BU2520AW ICsat TRANSISTOR DIODE IBend 10us 13us 32us ICsat IBend t - IBM Fig.5. Switching times definitions. ...

  • Page 4

    ... Fig.11. Typical collector-emitter saturation voltage BU2520A 1000 100 10 10 100 Fig.12. Typical turn-off losses Eoff = Product specification BU2520AW VBESAT / V BU2520A 125 sat = parameter VCESAT / V BU2520A 125 C ...

  • Page 5

    ... 85˚ kHz j 0.1 0.01 100 120 140 Fig.17. Forward bias safe operating area CDC = Second-breakdown limits independant of temperature Product specification BU2520AW Zth / (K/W) 1 0.5 0.2 0.1 0.05 0. 1E-06 1E-04 1E-02 1E+ Fig.16. Transient thermal impedance f(t); parameter j-mb ...

  • Page 6

    ... Net Mass 3.5 21 max 4.0 max 15.5 min 2.2 max 3.2 max Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 16 max 1.8 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.18. SOT429; pin 2 connected to mounting base. 6 Product specification BU2520AW 5.3 max o 3.5 max 0.9 max Rev 1.100 ...

  • Page 7

    ... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2520AW Rev 1.100 ...