BU2520AW Philips Semiconductors (Acquired by NXP), BU2520AW Datasheet

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BU2520AW

Manufacturer Part Number
BU2520AW
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
PINNING - SOT429
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
tab
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
-
in free air
C
Csat
2
BE
mb
BE
mb
1
= 6.0 A; I
3
= 0 V
= 6.0 A; I
= 0 V
25 ˚C
25 ˚C
B
= 1.2 A
B(end)
= 0.85 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
0.2
-65
45
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU2520AW
MAX.
MAX.
MAX.
1500
e
1500
c
0.35
800
125
800
150
125
150
150
5.0
1.0
10
25
10
25
6
9
6
-
-
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

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BU2520AW Summary of contents

Page 1

... ˚ 0.85 A Csat B(end) PIN CONFIGURATION CONDITIONS average over any 20 ms period ˚C mb CONDITIONS - in free air 1 Product specification BU2520AW TYP. MAX. UNIT - 1500 V - 800 125 0.2 0.35 s SYMBOL MIN. ...

Page 2

... MHz 6 330 H; C Csat 0. 3.45 H; B(end (-dI / 650 H; C Csat 1 5 B(end) B (-dI / Product specification BU2520AW MIN. TYP. MAX. UNIT - - 1 2 1.0 mA 7.5 13 800 - - 5 1 ...

Page 3

... VCE sust. Fig.4. Switching times waveforms (32 kHz). CEO min VCEOsust sust. CEO ICsat t IBend t IBend -VBB t Fig.6. Switching times test circuit (BU2520A). 3 Product specification BU2520AW ICsat TRANSISTOR DIODE IBend 10us 13us 32us ICsat IBend t - IBM Fig.5. Switching times definitions. ...

Page 4

... Fig.11. Typical collector-emitter saturation voltage BU2520A 1000 100 10 10 100 Fig.12. Typical turn-off losses Eoff = Product specification BU2520AW VBESAT / V BU2520A 125 sat = parameter VCESAT / V BU2520A 125 C ...

Page 5

... 85˚ kHz j 0.1 0.01 100 120 140 Fig.17. Forward bias safe operating area CDC = Second-breakdown limits independant of temperature Product specification BU2520AW Zth / (K/W) 1 0.5 0.2 0.1 0.05 0. 1E-06 1E-04 1E-02 1E+ Fig.16. Transient thermal impedance f(t); parameter j-mb ...

Page 6

... Net Mass 3.5 21 max 4.0 max 15.5 min 2.2 max 3.2 max Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 16 max 1.8 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.18. SOT429; pin 2 connected to mounting base. 6 Product specification BU2520AW 5.3 max o 3.5 max 0.9 max Rev 1.100 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2520AW Rev 1.100 ...

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